In-situ X-ray monitoring in MOVPE and feedback growth of strained InGaAs

T. Tsuchiya, T. Taniwatari, K. Uomi, T. Kawano, Y. Ono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Metalorganic chemical vapor deposition (MOVPE) has been intensively studied for thinlayer growth along with molecular beam epitaxy (MBE). Recently, in-situ monitoring has become more important for the evaluation and the precise control of epitaxial growth. In MBE, reflection high-energy electron diffraction (RHEED) (1) has often been used for the in-situ monitoring. RHEED, however, can not be applied to MOVPE due to its relatively high growth pressure (>10 torr). Therefore, only a few methods (2) not sensitive to growth pressure, have been reported for in-situ monitoring in MOVPE. In this paper, in-situ X-ray monitoring is introduced, for the first time, in MOVPE. Moreover, feedback growth of InGaAs composition is demonstrated using the insitu X-ray monitoring.

Original languageEnglish
Title of host publicationLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages646-649
Number of pages4
ISBN (Electronic)0780305221, 9780780305229
DOIs
Publication statusPublished - 1992 Jan 1
Externally publishedYes
EventLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 - Newport, United States
Duration: 1992 Apr 211992 Apr 24

Publication series

NameLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

Conference

ConferenceLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
CountryUnited States
CityNewport
Period92/4/2192/4/24

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electronic, Optical and Magnetic Materials
  • Computer Networks and Communications
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Tsuchiya, T., Taniwatari, T., Uomi, K., Kawano, T., & Ono, Y. (1992). In-situ X-ray monitoring in MOVPE and feedback growth of strained InGaAs. In LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 (pp. 646-649). [235554] (LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.1992.235554