In situ X-ray monitoring of metalorganic vapor phase epitaxy

Tomonobu Tsuchiya, Tsuyoshi Taniwatari, Kazuhisa Uomi, Toshihiro Kawano, Yuuichi Ono

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We demonstrate the in situ X-ray monitoring of metalorganic vapor phase epitaxy by using a four-crystal monochromator. The in situ X-ray measurement of InGaAs with a thickness of 0.3 μm on an InP substrate was achieved even under growth conditions at 620°C. Moreover, this monitoring technique is not affected by the atmosphere of the reactant source gasses. Also, the X-ray peak of the InGaAs at 300°C, is clearly separated from the InP peak in spite of the small lattice mismatch (-0.09%) without aligning the wafer. The dependence of lattice mismatch on temperature measured by this X-ray monitoring technique agrees with the dependence calculated theoretically. This technique can also be used to measure the thickness dependence of lattice mismatch and temperature dependence of in-plane compressive strain for InP on GaAs heteroepitaxy.

Original languageEnglish
Pages (from-to)4652-4655
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume32
Issue number10
Publication statusPublished - 1993 Oct
Externally publishedYes

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Metallorganic vapor phase epitaxy
vapor phase epitaxy
Lattice mismatch
X rays
Monitoring
x rays
Monochromators
monochromators
Epitaxial growth
wafers
atmospheres
Temperature
temperature dependence
Crystals
Substrates
crystals
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

In situ X-ray monitoring of metalorganic vapor phase epitaxy. / Tsuchiya, Tomonobu; Taniwatari, Tsuyoshi; Uomi, Kazuhisa; Kawano, Toshihiro; Ono, Yuuichi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 32, No. 10, 10.1993, p. 4652-4655.

Research output: Contribution to journalArticle

Tsuchiya, Tomonobu ; Taniwatari, Tsuyoshi ; Uomi, Kazuhisa ; Kawano, Toshihiro ; Ono, Yuuichi. / In situ X-ray monitoring of metalorganic vapor phase epitaxy. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1993 ; Vol. 32, No. 10. pp. 4652-4655.
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