In situ x-ray monitoring of metalorganic vapor phase epitaxy

Tomonobu Tsuchiya, Tsuyoshi Taniwatari, Kazuhisa Uomi, Toshihiro Kawano, Yuuichi Ono

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We demonstrate the in situ X-ray monitoring of metalorganic vapor phase epitaxy by using a four-crystal monochromator. The in situ X-ray measurement of InGaAs with a thickness of 0.3 fxm on an InP substrate was achieved even under growth conditions at 620°C. Moreover, this monitoring technique is not affected by the atmosphere of the reactant source gasses. Also, the X-ray peak of the InGaAs at 300°C, is clearly separated from the InP peak in spite of the small lattice mismatch (— 0.09%) without aligning the wafer. The dependence of lattice mismatch on temperature measured by this X-ray monitoring technique agrees with the dependence calculated theoretically. This technique can also be used to measure the thickness dependence of lattice mismatch and temperature dependence of in-plane compressive strain for InP on GaAs heteroepitaxy.

Original languageEnglish
Pages (from-to)4652-4655
Number of pages4
JournalJapanese journal of applied physics
Volume32
Issue number10 R
DOIs
Publication statusPublished - 1993 Oct
Externally publishedYes

Keywords

  • Compressive strain
  • Four-crystal monochromator
  • Lattice mismatch
  • Metalorganic vapor phase epitaxy
  • Situ X-ray monitoring

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'In situ x-ray monitoring of metalorganic vapor phase epitaxy'. Together they form a unique fingerprint.

  • Cite this