InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

Y. Hiraishi, T. Shirai, J. Kwoen, Y. Matushima, Hiroshi Ishikawa, Y. Arakawa, K. Utaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we applied the quantum dot intermixing (QDI) technique developed for 1550nm-band InAs QD to 1300nm-band InAs/GaAs QD. Two methods of defect introduction for QDI were employed such as ICP-RIE (Ar+) and ion implantation (B+). As a result, about 80nm PL wavelength peak shift was obtained for ICP-RIE when annealing was performed at 575°C, after etching down to 450 nm to the QD layer. On the other hand, about 110nm wavelength shift was obtained for B+ implantation at an acceleration voltage of 120 keV and a dose of 1.0 × 1014/cm2 and subsequent annealing.

Original languageEnglish
Title of host publication2019 Compound Semiconductor Week, CSW 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728100807
DOIs
Publication statusPublished - 2019 May
Event2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan
Duration: 2019 May 192019 May 23

Publication series

Name2019 Compound Semiconductor Week, CSW 2019 - Proceedings

Conference

Conference2019 Compound Semiconductor Week, CSW 2019
CountryJapan
CityNara
Period19/5/1919/5/23

Keywords

  • ICP-RIE
  • InAs/GaAs QD
  • QDI
  • ion implantation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics

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