InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

Y. Hiraishi, T. Shirai, J. Kwoen, Y. Matushima, H. Ishikawa, Y. Arakawa, K. Utaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we applied the quantum dot intermixing (QDI) technique developed for 1550nm-band InAs QD to 1300nm-band InAs/GaAs QD. Two methods of defect introduction for QDI were employed such as ICP-RIE (Ar+) and ion implantation (B+). As a result, about 80nm PL wavelength peak shift was obtained for ICP-RIE when annealing was performed at 575°C, after etching down to 450 nm to the QD layer. On the other hand, about 110nm wavelength shift was obtained for B+ implantation at an acceleration voltage of 120 keV and a dose of 1.0 × 1014/cm2 and subsequent annealing.

Original languageEnglish
Title of host publication2019 Compound Semiconductor Week, CSW 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728100807
DOIs
Publication statusPublished - 2019 May
Event2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan
Duration: 2019 May 192019 May 23

Publication series

Name2019 Compound Semiconductor Week, CSW 2019 - Proceedings

Conference

Conference2019 Compound Semiconductor Week, CSW 2019
CountryJapan
CityNara
Period19/5/1919/5/23

Fingerprint

Dry etching
Reactive ion etching
Ion implantation
Semiconductor quantum dots
ion implantation
implantation
quantum dots
etching
Annealing
Wavelength
annealing
shift
wavelengths
Etching
dosage
Defects
defects
Electric potential
electric potential
gallium arsenide

Keywords

  • ICP-RIE
  • InAs/GaAs QD
  • ion implantation
  • QDI

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics

Cite this

Hiraishi, Y., Shirai, T., Kwoen, J., Matushima, Y., Ishikawa, H., Arakawa, Y., & Utaka, K. (2019). InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation. In 2019 Compound Semiconductor Week, CSW 2019 - Proceedings [8819072] (2019 Compound Semiconductor Week, CSW 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2019.8819072

InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation. / Hiraishi, Y.; Shirai, T.; Kwoen, J.; Matushima, Y.; Ishikawa, H.; Arakawa, Y.; Utaka, K.

2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8819072 (2019 Compound Semiconductor Week, CSW 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hiraishi, Y, Shirai, T, Kwoen, J, Matushima, Y, Ishikawa, H, Arakawa, Y & Utaka, K 2019, InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation. in 2019 Compound Semiconductor Week, CSW 2019 - Proceedings., 8819072, 2019 Compound Semiconductor Week, CSW 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 Compound Semiconductor Week, CSW 2019, Nara, Japan, 19/5/19. https://doi.org/10.1109/ICIPRM.2019.8819072
Hiraishi Y, Shirai T, Kwoen J, Matushima Y, Ishikawa H, Arakawa Y et al. InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation. In 2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8819072. (2019 Compound Semiconductor Week, CSW 2019 - Proceedings). https://doi.org/10.1109/ICIPRM.2019.8819072
Hiraishi, Y. ; Shirai, T. ; Kwoen, J. ; Matushima, Y. ; Ishikawa, H. ; Arakawa, Y. ; Utaka, K. / InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation. 2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 Compound Semiconductor Week, CSW 2019 - Proceedings).
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abstract = "In this paper, we applied the quantum dot intermixing (QDI) technique developed for 1550nm-band InAs QD to 1300nm-band InAs/GaAs QD. Two methods of defect introduction for QDI were employed such as ICP-RIE (Ar+) and ion implantation (B+). As a result, about 80nm PL wavelength peak shift was obtained for ICP-RIE when annealing was performed at 575°C, after etching down to 450 nm to the QD layer. On the other hand, about 110nm wavelength shift was obtained for B+ implantation at an acceleration voltage of 120 keV and a dose of 1.0 × 1014/cm2 and subsequent annealing.",
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