A double heterostructure consisting of InAsPSb alloys was made by LPE-growth on InAs substrates. Lasing action was confirmed at 15-55 K, where the emission wavelength was 2.5-2.7 μm.
|Number of pages||3|
|Publication status||Published - 1988 Jan 1|
ASJC Scopus subject areas
- Electrical and Electronic Engineering