InAsPSb/InAs diode laser emitting in the 2.5μm range

S. Akiba, Yuichi Matsushima, T. Iketani, M. Usami

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A double heterostructure consisting of InAsPSb alloys was made by LPE-growth on InAs substrates. Lasing action was confirmed at 15-55 K, where the emission wavelength was 2.5-2.7 μm.

Original languageEnglish
Pages (from-to)1069-1071
Number of pages3
JournalElectronics Letters
Volume24
Issue number17
Publication statusPublished - 1988 Jan 1
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Akiba, S., Matsushima, Y., Iketani, T., & Usami, M. (1988). InAsPSb/InAs diode laser emitting in the 2.5μm range. Electronics Letters, 24(17), 1069-1071.