Increased electron mobility in n -type Si-doped AlN by reducing dislocation density

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

For n -type Si-doped AlN with a low Si doping concentration of 3× 1017 cm-2, a high room-temperature electron mobility of 426 cm2 V-1 s-1 was achieved, and at 220 K the mobility reached 730 cm2 V-1 s-1, the highest value ever reported for AlN. At Si doping concentrations lower than 1018 cm-3, dislocation scattering is the most dominant scattering mechanism, and the mobility can therefore be increased significantly by reducing the dislocation density.

Original languageEnglish
Article number182112
JournalApplied Physics Letters
Volume89
Issue number18
DOIs
Publication statusPublished - 2006
Externally publishedYes

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electron mobility
scattering
low concentrations
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Increased electron mobility in n -type Si-doped AlN by reducing dislocation density. / Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 89, No. 18, 182112, 2006.

Research output: Contribution to journalArticle

@article{1e8079387d5543fcb4b99a29e54ae33e,
title = "Increased electron mobility in n -type Si-doped AlN by reducing dislocation density",
abstract = "For n -type Si-doped AlN with a low Si doping concentration of 3× 1017 cm-2, a high room-temperature electron mobility of 426 cm2 V-1 s-1 was achieved, and at 220 K the mobility reached 730 cm2 V-1 s-1, the highest value ever reported for AlN. At Si doping concentrations lower than 1018 cm-3, dislocation scattering is the most dominant scattering mechanism, and the mobility can therefore be increased significantly by reducing the dislocation density.",
author = "Yoshitaka Taniyasu and Makoto Kasu and Toshiki Makimoto",
year = "2006",
doi = "10.1063/1.2378726",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "18",

}

TY - JOUR

T1 - Increased electron mobility in n -type Si-doped AlN by reducing dislocation density

AU - Taniyasu, Yoshitaka

AU - Kasu, Makoto

AU - Makimoto, Toshiki

PY - 2006

Y1 - 2006

N2 - For n -type Si-doped AlN with a low Si doping concentration of 3× 1017 cm-2, a high room-temperature electron mobility of 426 cm2 V-1 s-1 was achieved, and at 220 K the mobility reached 730 cm2 V-1 s-1, the highest value ever reported for AlN. At Si doping concentrations lower than 1018 cm-3, dislocation scattering is the most dominant scattering mechanism, and the mobility can therefore be increased significantly by reducing the dislocation density.

AB - For n -type Si-doped AlN with a low Si doping concentration of 3× 1017 cm-2, a high room-temperature electron mobility of 426 cm2 V-1 s-1 was achieved, and at 220 K the mobility reached 730 cm2 V-1 s-1, the highest value ever reported for AlN. At Si doping concentrations lower than 1018 cm-3, dislocation scattering is the most dominant scattering mechanism, and the mobility can therefore be increased significantly by reducing the dislocation density.

UR - http://www.scopus.com/inward/record.url?scp=33750743430&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750743430&partnerID=8YFLogxK

U2 - 10.1063/1.2378726

DO - 10.1063/1.2378726

M3 - Article

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 182112

ER -