Increased electron mobility in n -type Si-doped AlN by reducing dislocation density

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto

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For n -type Si-doped AlN with a low Si doping concentration of 3× 1017 cm-2, a high room-temperature electron mobility of 426 cm2 V-1 s-1 was achieved, and at 220 K the mobility reached 730 cm2 V-1 s-1, the highest value ever reported for AlN. At Si doping concentrations lower than 1018 cm-3, dislocation scattering is the most dominant scattering mechanism, and the mobility can therefore be increased significantly by reducing the dislocation density.

Original languageEnglish
Article number182112
JournalApplied Physics Letters
Issue number18
Publication statusPublished - 2006 Nov 13


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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