Increased rate of ozone adsorption on Si(111)-(7 × 7) with nitrogen preadsorption

Ken Nakamura, Akira Kurokawa, Shingo Ichimura

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We observed by surface second harmonic generation (SHG) that initial the rate of second harmonics (SH) intensity decay during ozone adsorption on nitrogen-preadsorbed Si(111) was four times faster than on clean Si(111)-(7 × 7) because of the adsorption not only of atomic oxygen but also of oxygen molecules released by the dissociation of incident ozone molecules. The temperature dependence of the adsorption rate on nitrogen-adsorbed Si(111) was opposite to that on the clean Si(11)-(7 × 7) surface, but similar to that of molecular oxygen on Si(11)-(7 × 7). With increasing surface temperature, the sticking probability lessened in a similar way to that of molecular oxygen. This suggests that the sticking probability of molecular oxygen released by dissociating ozone molecules increases on nitrogen-adsorbed Si(111).

Original languageEnglish
Pages (from-to)165-169
Number of pages5
JournalSurface Science
Volume402-404
DOIs
Publication statusPublished - 1998 May 15
Externally publishedYes

Fingerprint

Molecular oxygen
Ozone
ozone
Nitrogen
Adsorption
nitrogen
Molecules
adsorption
oxygen
Oxygen
Harmonic generation
molecules
Temperature
surface temperature
harmonic generations
dissociation
harmonics
temperature dependence
decay

Keywords

  • Adsorption
  • Nitrogen
  • Ozone
  • Second harmonic generation
  • Silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Increased rate of ozone adsorption on Si(111)-(7 × 7) with nitrogen preadsorption. / Nakamura, Ken; Kurokawa, Akira; Ichimura, Shingo.

In: Surface Science, Vol. 402-404, 15.05.1998, p. 165-169.

Research output: Contribution to journalArticle

@article{171bdbb2eb8e4c18b9d4c8bc6dd40fd0,
title = "Increased rate of ozone adsorption on Si(111)-(7 × 7) with nitrogen preadsorption",
abstract = "We observed by surface second harmonic generation (SHG) that initial the rate of second harmonics (SH) intensity decay during ozone adsorption on nitrogen-preadsorbed Si(111) was four times faster than on clean Si(111)-(7 × 7) because of the adsorption not only of atomic oxygen but also of oxygen molecules released by the dissociation of incident ozone molecules. The temperature dependence of the adsorption rate on nitrogen-adsorbed Si(111) was opposite to that on the clean Si(11)-(7 × 7) surface, but similar to that of molecular oxygen on Si(11)-(7 × 7). With increasing surface temperature, the sticking probability lessened in a similar way to that of molecular oxygen. This suggests that the sticking probability of molecular oxygen released by dissociating ozone molecules increases on nitrogen-adsorbed Si(111).",
keywords = "Adsorption, Nitrogen, Ozone, Second harmonic generation, Silicon",
author = "Ken Nakamura and Akira Kurokawa and Shingo Ichimura",
year = "1998",
month = "5",
day = "15",
doi = "10.1016/S0039-6028(97)00958-8",
language = "English",
volume = "402-404",
pages = "165--169",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",

}

TY - JOUR

T1 - Increased rate of ozone adsorption on Si(111)-(7 × 7) with nitrogen preadsorption

AU - Nakamura, Ken

AU - Kurokawa, Akira

AU - Ichimura, Shingo

PY - 1998/5/15

Y1 - 1998/5/15

N2 - We observed by surface second harmonic generation (SHG) that initial the rate of second harmonics (SH) intensity decay during ozone adsorption on nitrogen-preadsorbed Si(111) was four times faster than on clean Si(111)-(7 × 7) because of the adsorption not only of atomic oxygen but also of oxygen molecules released by the dissociation of incident ozone molecules. The temperature dependence of the adsorption rate on nitrogen-adsorbed Si(111) was opposite to that on the clean Si(11)-(7 × 7) surface, but similar to that of molecular oxygen on Si(11)-(7 × 7). With increasing surface temperature, the sticking probability lessened in a similar way to that of molecular oxygen. This suggests that the sticking probability of molecular oxygen released by dissociating ozone molecules increases on nitrogen-adsorbed Si(111).

AB - We observed by surface second harmonic generation (SHG) that initial the rate of second harmonics (SH) intensity decay during ozone adsorption on nitrogen-preadsorbed Si(111) was four times faster than on clean Si(111)-(7 × 7) because of the adsorption not only of atomic oxygen but also of oxygen molecules released by the dissociation of incident ozone molecules. The temperature dependence of the adsorption rate on nitrogen-adsorbed Si(111) was opposite to that on the clean Si(11)-(7 × 7) surface, but similar to that of molecular oxygen on Si(11)-(7 × 7). With increasing surface temperature, the sticking probability lessened in a similar way to that of molecular oxygen. This suggests that the sticking probability of molecular oxygen released by dissociating ozone molecules increases on nitrogen-adsorbed Si(111).

KW - Adsorption

KW - Nitrogen

KW - Ozone

KW - Second harmonic generation

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0031641370&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031641370&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(97)00958-8

DO - 10.1016/S0039-6028(97)00958-8

M3 - Article

AN - SCOPUS:0031641370

VL - 402-404

SP - 165

EP - 169

JO - Surface Science

JF - Surface Science

SN - 0039-6028

ER -