The incubation time t1 was measured during the deposition of Silicon form silanes on to SiO2 using chemical vapor deposition. It was observed that incubation time causes selective deposition on patterned substrates. The partial pressure of the precursor and the substrate temperature were found to affect t1. The formation of Silicon nanoislands was observed during the incubation period. The results show that island growth is governed by direct deposition onto islands.
ASJC Scopus subject areas
- Surfaces and Interfaces
- Process Chemistry and Technology