Incubation time during the CVD of Si onto SiO2 from silane

Yuya Kajikawa, Toshihiro Tsuchiya, Suguru Noda, Hiroshi Komiyama

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20 Citations (Scopus)

Abstract

The incubation time t1 was measured during the deposition of Silicon form silanes on to SiO2 using chemical vapor deposition. It was observed that incubation time causes selective deposition on patterned substrates. The partial pressure of the precursor and the substrate temperature were found to affect t1. The formation of Silicon nanoislands was observed during the incubation period. The results show that island growth is governed by direct deposition onto islands.

Original languageEnglish
Pages (from-to)128-133
Number of pages6
JournalChemical Vapor Deposition
Volume10
Issue number3
DOIs
Publication statusPublished - 2004 Jun 1

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ASJC Scopus subject areas

  • Chemistry(all)
  • Surfaces and Interfaces
  • Process Chemistry and Technology

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