Incubation time during the CVD of Si onto SiO2 from silane

Yuya Kajikawa, Toshihiro Tsuchiya, Suguru Noda, Hiroshi Komiyama

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The incubation time t1 was measured during the deposition of Silicon form silanes on to SiO2 using chemical vapor deposition. It was observed that incubation time causes selective deposition on patterned substrates. The partial pressure of the precursor and the substrate temperature were found to affect t1. The formation of Silicon nanoislands was observed during the incubation period. The results show that island growth is governed by direct deposition onto islands.

Original languageEnglish
Pages (from-to)128-133
Number of pages6
JournalChemical Vapor Deposition
Volume10
Issue number3
DOIs
Publication statusPublished - 2004 Jun
Externally publishedYes

Fingerprint

Silanes
silanes
Chemical vapor deposition
vapor deposition
Silicon
silicon
Substrates
Partial pressure
partial pressure
causes
Temperature
temperature

ASJC Scopus subject areas

  • Electrochemistry
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Incubation time during the CVD of Si onto SiO2 from silane. / Kajikawa, Yuya; Tsuchiya, Toshihiro; Noda, Suguru; Komiyama, Hiroshi.

In: Chemical Vapor Deposition, Vol. 10, No. 3, 06.2004, p. 128-133.

Research output: Contribution to journalArticle

Kajikawa, Yuya ; Tsuchiya, Toshihiro ; Noda, Suguru ; Komiyama, Hiroshi. / Incubation time during the CVD of Si onto SiO2 from silane. In: Chemical Vapor Deposition. 2004 ; Vol. 10, No. 3. pp. 128-133.
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