Indium oxide-based transparent conductive films deposited by reactive sputtering using alloy targets

Yusuke Miyazaki, Eri Maruyama, Junjun Jia, Hironobu MacHinaga, Yuzo Shigesato

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate (PET) substrates in the "transition region" by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 °C were 3.3 ×10-4 and 5.4 ×10-4Ωcm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 ×10-4Ωcm were deposited at a dc self-bias voltage of -60 V.

Original languageEnglish
Article number045503
JournalJapanese journal of applied physics
Volume56
Issue number4
DOIs
Publication statusPublished - 2017
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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