TY - JOUR
T1 - Indium oxide-based transparent conductive films deposited by reactive sputtering using alloy targets
AU - Miyazaki, Yusuke
AU - Maruyama, Eri
AU - Jia, Junjun
AU - MacHinaga, Hironobu
AU - Shigesato, Yuzo
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017
Y1 - 2017
N2 - High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate (PET) substrates in the "transition region" by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 °C were 3.3 ×10-4 and 5.4 ×10-4Ωcm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 ×10-4Ωcm were deposited at a dc self-bias voltage of -60 V.
AB - High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate (PET) substrates in the "transition region" by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 °C were 3.3 ×10-4 and 5.4 ×10-4Ωcm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 ×10-4Ωcm were deposited at a dc self-bias voltage of -60 V.
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U2 - 10.7567/JJAP.56.045503
DO - 10.7567/JJAP.56.045503
M3 - Article
AN - SCOPUS:85067808465
SN - 0021-4922
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 4
M1 - 045503
ER -