Indium tin oxide as transparent electrode material for ZnSe-based blue quantum well light emitters

M. Hagerott; H. Jeon; A. V. Nurmikko; W. Xie; D. C. Grillo; M. Kobayashi; R. L. Gunshor

doi:10.1063/1.106836

Indium tin oxide as transparent electrode material for ZnSe-based blue quantum well light emitters

M. Hagerott^*, H. Jeon, A. V. Nurmikko, W. Xie, D. C. Grillo, M. Kobayashi, R. L. Gunshor

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

Sputter deposited indium tin oxide layers have been used as the top contact for blue LEDs and diode lasers in (Zn,Cd)Se/Zn(S,Se) quantum well heterostructures. The contact resistance to n-Zn(S,Se) is comparable to that with indium or gold. The optically transparent contacts have been utilized, as an example, in the fabrication of a numeric display device and to show that LED emission is of excitonic origin in these type I quantum wells.

Original language	English
Pages (from-to)	2825-2827
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	23
DOIs	https://doi.org/10.1063/1.106836
Publication status	Published - 1992
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.106836

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abstract = "Sputter deposited indium tin oxide layers have been used as the top contact for blue LEDs and diode lasers in (Zn,Cd)Se/Zn(S,Se) quantum well heterostructures. The contact resistance to n-Zn(S,Se) is comparable to that with indium or gold. The optically transparent contacts have been utilized, as an example, in the fabrication of a numeric display device and to show that LED emission is of excitonic origin in these type I quantum wells.",

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AU - Hagerott, M.

AU - Jeon, H.

AU - Nurmikko, A. V.

AU - Xie, W.

AU - Grillo, D. C.

AU - Kobayashi, M.

AU - Gunshor, R. L.

PY - 1992

Y1 - 1992

N2 - Sputter deposited indium tin oxide layers have been used as the top contact for blue LEDs and diode lasers in (Zn,Cd)Se/Zn(S,Se) quantum well heterostructures. The contact resistance to n-Zn(S,Se) is comparable to that with indium or gold. The optically transparent contacts have been utilized, as an example, in the fabrication of a numeric display device and to show that LED emission is of excitonic origin in these type I quantum wells.

AB - Sputter deposited indium tin oxide layers have been used as the top contact for blue LEDs and diode lasers in (Zn,Cd)Se/Zn(S,Se) quantum well heterostructures. The contact resistance to n-Zn(S,Se) is comparable to that with indium or gold. The optically transparent contacts have been utilized, as an example, in the fabrication of a numeric display device and to show that LED emission is of excitonic origin in these type I quantum wells.

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JF - Applied Physics Letters

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Indium tin oxide as transparent electrode material for ZnSe-based blue quantum well light emitters

Abstract

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