Indium tin oxide as transparent electrode material for ZnSe-based blue quantum well light emitters

M. Hagerott, H. Jeon, A. V. Nurmikko, W. Xie, D. C. Grillo, M. Kobayashi, R. L. Gunshor

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Abstract

Sputter deposited indium tin oxide layers have been used as the top contact for blue LEDs and diode lasers in (Zn,Cd)Se/Zn(S,Se) quantum well heterostructures. The contact resistance to n-Zn(S,Se) is comparable to that with indium or gold. The optically transparent contacts have been utilized, as an example, in the fabrication of a numeric display device and to show that LED emission is of excitonic origin in these type I quantum wells.

Original languageEnglish
Pages (from-to)2825-2827
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number23
DOIs
Publication statusPublished - 1992 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Hagerott, M., Jeon, H., Nurmikko, A. V., Xie, W., Grillo, D. C., Kobayashi, M., & Gunshor, R. L. (1992). Indium tin oxide as transparent electrode material for ZnSe-based blue quantum well light emitters. Applied Physics Letters, 60(23), 2825-2827. https://doi.org/10.1063/1.106836