TY - GEN
T1 - Influence of atmosphere on photo-assisted atomic switch operations
AU - Hino, Takami
AU - Hasegawa, Tsuyoshi
AU - Tanaka, Hirofumi
AU - Tsuruoka, Tohru
AU - Ogawa, Takuji
AU - Aono, Masakazu
PY - 2014
Y1 - 2014
N2 - We conducted light irradiation experiments in air to clarify influence of atmosphere on the operation of a photo-assisted atomic switch. In air, Pt-Ag2S/Ag nanogap electrodes with a PTCDI thin layer in their nanogaps showed current fluctuations with an applied bias of from 1.5 V to 6 V regardless of the bias polarity and with or without light irradiation. This is in contrast to the fact that only two things cause an increase in current that result in the formation of a silver bridge and switching behavior under vacuum, namely, light irradiation and the application of positive bias to the Ag 2S/Ag electrode [1]. In addition, photocurrent caused by irradiating a PTCDI thin layer was found to be sensitive to air and to N2. These results indicate that moisture or other gas molecules in air and in N 2 have an influence on the photo-assisted atomic switching behavior.
AB - We conducted light irradiation experiments in air to clarify influence of atmosphere on the operation of a photo-assisted atomic switch. In air, Pt-Ag2S/Ag nanogap electrodes with a PTCDI thin layer in their nanogaps showed current fluctuations with an applied bias of from 1.5 V to 6 V regardless of the bias polarity and with or without light irradiation. This is in contrast to the fact that only two things cause an increase in current that result in the formation of a silver bridge and switching behavior under vacuum, namely, light irradiation and the application of positive bias to the Ag 2S/Ag electrode [1]. In addition, photocurrent caused by irradiating a PTCDI thin layer was found to be sensitive to air and to N2. These results indicate that moisture or other gas molecules in air and in N 2 have an influence on the photo-assisted atomic switching behavior.
KW - Atomic switch
KW - Nanogap electrode
KW - Photoconductive material
UR - http://www.scopus.com/inward/record.url?scp=84891888839&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84891888839&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.596.116
DO - 10.4028/www.scientific.net/KEM.596.116
M3 - Conference contribution
AN - SCOPUS:84891888839
SN - 9783037859629
T3 - Key Engineering Materials
SP - 116
EP - 120
BT - Advanced Micro-Device Engineering IV
PB - Trans Tech Publications Ltd
T2 - 4th International Conference on Advanced Micro-Device Engineering, AMDE 2012
Y2 - 7 December 2012 through 7 December 2012
ER -