Influence of deposition temperature on the microstructure of Pb-Ti-Nb-O thin films by metallorganic chemical vapor deposition

Xue Dong Liu; Hiroshi Funakubo; Suguru Noda; Hiroshi Komiyama

doi:10.1149/1.1349880

Influence of deposition temperature on the microstructure of Pb-Ti-Nb-O thin films by metallorganic chemical vapor deposition

Xue Dong Liu^*, Hiroshi Funakubo, Suguru Noda, Hiroshi Komiyama

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

In the current study, we grew Pb-Ti-Nb-O (PTN) thin films on Pt/Ti/SiO₂/Si substrate by metallorganic chemical vapor deposition (MOCVD) at temperatures ranging from 400 to 620°C. The thin films obtained were examined by X-ray diffraction and cross-sectional transmission electron microscopy. It was revealed that both the PTN film and its interface with the underlying Pt layer were quite sensitive to variations in the deposition temperature. The considerable change in surface morphology of PTN thin films with an enhanced deposition temperature is discussed in relation to the surface hillocks formed on the Pt layer by aggregation of the out-diffused Pt atoms during MOCVD.

Original language	English
Pages (from-to)	C227-C230
Journal	Journal of the Electrochemical Society
Volume	148
Issue number	3
DOIs	https://doi.org/10.1149/1.1349880
Publication status	Published - 2001
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.1349880

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abstract = "In the current study, we grew Pb-Ti-Nb-O (PTN) thin films on Pt/Ti/SiO2/Si substrate by metallorganic chemical vapor deposition (MOCVD) at temperatures ranging from 400 to 620°C. The thin films obtained were examined by X-ray diffraction and cross-sectional transmission electron microscopy. It was revealed that both the PTN film and its interface with the underlying Pt layer were quite sensitive to variations in the deposition temperature. The considerable change in surface morphology of PTN thin films with an enhanced deposition temperature is discussed in relation to the surface hillocks formed on the Pt layer by aggregation of the out-diffused Pt atoms during MOCVD.",

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T1 - Influence of deposition temperature on the microstructure of Pb-Ti-Nb-O thin films by metallorganic chemical vapor deposition

AU - Liu, Xue Dong

AU - Funakubo, Hiroshi

AU - Noda, Suguru

AU - Komiyama, Hiroshi

PY - 2001

Y1 - 2001

N2 - In the current study, we grew Pb-Ti-Nb-O (PTN) thin films on Pt/Ti/SiO2/Si substrate by metallorganic chemical vapor deposition (MOCVD) at temperatures ranging from 400 to 620°C. The thin films obtained were examined by X-ray diffraction and cross-sectional transmission electron microscopy. It was revealed that both the PTN film and its interface with the underlying Pt layer were quite sensitive to variations in the deposition temperature. The considerable change in surface morphology of PTN thin films with an enhanced deposition temperature is discussed in relation to the surface hillocks formed on the Pt layer by aggregation of the out-diffused Pt atoms during MOCVD.

AB - In the current study, we grew Pb-Ti-Nb-O (PTN) thin films on Pt/Ti/SiO2/Si substrate by metallorganic chemical vapor deposition (MOCVD) at temperatures ranging from 400 to 620°C. The thin films obtained were examined by X-ray diffraction and cross-sectional transmission electron microscopy. It was revealed that both the PTN film and its interface with the underlying Pt layer were quite sensitive to variations in the deposition temperature. The considerable change in surface morphology of PTN thin films with an enhanced deposition temperature is discussed in relation to the surface hillocks formed on the Pt layer by aggregation of the out-diffused Pt atoms during MOCVD.

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Influence of deposition temperature on the microstructure of Pb-Ti-Nb-O thin films by metallorganic chemical vapor deposition

Abstract

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