Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films

Mareike V. Frischbier, Hans F. Wardenga, Mirko Weidner, Oliver Bierwagen, Junjun Jia, Yuzo Shigesato, Andreas Klein*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)


The influence of dopant species and concentration on the grain boundary scattering of differently doped In2O3 thin films is studied by means of room temperature and temperature dependent Hall effect measurements. Barrier heights at grain boundaries EB are evaluated from temperature dependent carrier mobility taking the theoretically calculated temperature dependence of intragrain mobility into account. It is thereby shown that also samples with a negative temperature coefficient of mobility exhibit significant grain boundary barrier heights and that EB is usually underestimated when evaluated based on Seto's model. It is also shown that the most commonly used Sn doping of In2O3 with a dopant concentration > 2 wt . % SnO2 leads to significantly enhanced grain boundary scattering compared to nominally undoped, Zr-doped and H-doped films. An effect of grain boundary scattering is even observed for carrier concentrations ~ 1021 cm− 3 if the films exhibit a pronounced (100) texture. The poor grain boundary properties of highly Sn-doped In2O3 are attributed to segregation of the Sn dopants, which is also indicated by measurements of surface Sn concentration.

Original languageEnglish
Pages (from-to)62-68
Number of pages7
JournalThin Solid Films
Publication statusPublished - 2016 Sep 1
Externally publishedYes


  • Doping
  • Grain boundaries
  • Hall effect
  • Indium oxide
  • Segregation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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