Abstract
The influence of dopant species and concentration on the grain boundary scattering of differently doped In2O3 thin films is studied by means of room temperature and temperature dependent Hall effect measurements. Barrier heights at grain boundaries EB are evaluated from temperature dependent carrier mobility taking the theoretically calculated temperature dependence of intragrain mobility into account. It is thereby shown that also samples with a negative temperature coefficient of mobility exhibit significant grain boundary barrier heights and that EB is usually underestimated when evaluated based on Seto's model. It is also shown that the most commonly used Sn doping of In2O3 with a dopant concentration > 2 wt . % SnO2 leads to significantly enhanced grain boundary scattering compared to nominally undoped, Zr-doped and H-doped films. An effect of grain boundary scattering is even observed for carrier concentrations ~ 1021 cm− 3 if the films exhibit a pronounced (100) texture. The poor grain boundary properties of highly Sn-doped In2O3 are attributed to segregation of the Sn dopants, which is also indicated by measurements of surface Sn concentration.
| Original language | English |
|---|---|
| Pages (from-to) | 62-68 |
| Number of pages | 7 |
| Journal | Thin Solid Films |
| Volume | 614 |
| DOIs | |
| Publication status | Published - 2016 Sep 1 |
| Externally published | Yes |
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Keywords
- Doping
- Grain boundaries
- Hall effect
- Indium oxide
- Segregation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films. / Frischbier, Mareike V.; Wardenga, Hans F.; Weidner, Mirko; Bierwagen, Oliver; Jia, Junjun; Shigesato, Yuzo; Klein, Andreas.
In: Thin Solid Films, Vol. 614, 01.09.2016, p. 62-68.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films
AU - Frischbier, Mareike V.
AU - Wardenga, Hans F.
AU - Weidner, Mirko
AU - Bierwagen, Oliver
AU - Jia, Junjun
AU - Shigesato, Yuzo
AU - Klein, Andreas
PY - 2016/9/1
Y1 - 2016/9/1
N2 - The influence of dopant species and concentration on the grain boundary scattering of differently doped In2O3 thin films is studied by means of room temperature and temperature dependent Hall effect measurements. Barrier heights at grain boundaries EB are evaluated from temperature dependent carrier mobility taking the theoretically calculated temperature dependence of intragrain mobility into account. It is thereby shown that also samples with a negative temperature coefficient of mobility exhibit significant grain boundary barrier heights and that EB is usually underestimated when evaluated based on Seto's model. It is also shown that the most commonly used Sn doping of In2O3 with a dopant concentration > 2 wt . % SnO2 leads to significantly enhanced grain boundary scattering compared to nominally undoped, Zr-doped and H-doped films. An effect of grain boundary scattering is even observed for carrier concentrations ~ 1021 cm− 3 if the films exhibit a pronounced (100) texture. The poor grain boundary properties of highly Sn-doped In2O3 are attributed to segregation of the Sn dopants, which is also indicated by measurements of surface Sn concentration.
AB - The influence of dopant species and concentration on the grain boundary scattering of differently doped In2O3 thin films is studied by means of room temperature and temperature dependent Hall effect measurements. Barrier heights at grain boundaries EB are evaluated from temperature dependent carrier mobility taking the theoretically calculated temperature dependence of intragrain mobility into account. It is thereby shown that also samples with a negative temperature coefficient of mobility exhibit significant grain boundary barrier heights and that EB is usually underestimated when evaluated based on Seto's model. It is also shown that the most commonly used Sn doping of In2O3 with a dopant concentration > 2 wt . % SnO2 leads to significantly enhanced grain boundary scattering compared to nominally undoped, Zr-doped and H-doped films. An effect of grain boundary scattering is even observed for carrier concentrations ~ 1021 cm− 3 if the films exhibit a pronounced (100) texture. The poor grain boundary properties of highly Sn-doped In2O3 are attributed to segregation of the Sn dopants, which is also indicated by measurements of surface Sn concentration.
KW - Doping
KW - Grain boundaries
KW - Hall effect
KW - Indium oxide
KW - Segregation
UR - http://www.scopus.com/inward/record.url?scp=84961918798&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84961918798&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2016.03.022
DO - 10.1016/j.tsf.2016.03.022
M3 - Article
AN - SCOPUS:84961918798
VL - 614
SP - 62
EP - 68
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -