Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films

Mareike V. Frischbier, Hans F. Wardenga, Mirko Weidner, Oliver Bierwagen, Junjun Jia, Yuzo Shigesato, Andreas Klein

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The influence of dopant species and concentration on the grain boundary scattering of differently doped In2O3 thin films is studied by means of room temperature and temperature dependent Hall effect measurements. Barrier heights at grain boundaries EB are evaluated from temperature dependent carrier mobility taking the theoretically calculated temperature dependence of intragrain mobility into account. It is thereby shown that also samples with a negative temperature coefficient of mobility exhibit significant grain boundary barrier heights and that EB is usually underestimated when evaluated based on Seto's model. It is also shown that the most commonly used Sn doping of In2O3 with a dopant concentration > 2 wt . % SnO2 leads to significantly enhanced grain boundary scattering compared to nominally undoped, Zr-doped and H-doped films. An effect of grain boundary scattering is even observed for carrier concentrations ~ 1021 cm− 3 if the films exhibit a pronounced (100) texture. The poor grain boundary properties of highly Sn-doped In2O3 are attributed to segregation of the Sn dopants, which is also indicated by measurements of surface Sn concentration.

Original languageEnglish
Pages (from-to)62-68
Number of pages7
JournalThin Solid Films
Volume614
DOIs
Publication statusPublished - 2016 Sep 1
Externally publishedYes

Fingerprint

Grain boundaries
grain boundaries
Doping (additives)
Scattering
Thin films
thin films
scattering
Negative temperature coefficient
Temperature
Carrier mobility
Hall effect
carrier mobility
Carrier concentration
temperature
textures
Textures
temperature dependence
room temperature
coefficients

Keywords

  • Doping
  • Grain boundaries
  • Hall effect
  • Indium oxide
  • Segregation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films. / Frischbier, Mareike V.; Wardenga, Hans F.; Weidner, Mirko; Bierwagen, Oliver; Jia, Junjun; Shigesato, Yuzo; Klein, Andreas.

In: Thin Solid Films, Vol. 614, 01.09.2016, p. 62-68.

Research output: Contribution to journalArticle

Frischbier, Mareike V. ; Wardenga, Hans F. ; Weidner, Mirko ; Bierwagen, Oliver ; Jia, Junjun ; Shigesato, Yuzo ; Klein, Andreas. / Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films. In: Thin Solid Films. 2016 ; Vol. 614. pp. 62-68.
@article{3aa59193fd5e405a91984423fda56332,
title = "Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films",
abstract = "The influence of dopant species and concentration on the grain boundary scattering of differently doped In2O3 thin films is studied by means of room temperature and temperature dependent Hall effect measurements. Barrier heights at grain boundaries EB are evaluated from temperature dependent carrier mobility taking the theoretically calculated temperature dependence of intragrain mobility into account. It is thereby shown that also samples with a negative temperature coefficient of mobility exhibit significant grain boundary barrier heights and that EB is usually underestimated when evaluated based on Seto's model. It is also shown that the most commonly used Sn doping of In2O3 with a dopant concentration > 2 wt . {\%} SnO2 leads to significantly enhanced grain boundary scattering compared to nominally undoped, Zr-doped and H-doped films. An effect of grain boundary scattering is even observed for carrier concentrations ~ 1021 cm− 3 if the films exhibit a pronounced (100) texture. The poor grain boundary properties of highly Sn-doped In2O3 are attributed to segregation of the Sn dopants, which is also indicated by measurements of surface Sn concentration.",
keywords = "Doping, Grain boundaries, Hall effect, Indium oxide, Segregation",
author = "Frischbier, {Mareike V.} and Wardenga, {Hans F.} and Mirko Weidner and Oliver Bierwagen and Junjun Jia and Yuzo Shigesato and Andreas Klein",
year = "2016",
month = "9",
day = "1",
doi = "10.1016/j.tsf.2016.03.022",
language = "English",
volume = "614",
pages = "62--68",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films

AU - Frischbier, Mareike V.

AU - Wardenga, Hans F.

AU - Weidner, Mirko

AU - Bierwagen, Oliver

AU - Jia, Junjun

AU - Shigesato, Yuzo

AU - Klein, Andreas

PY - 2016/9/1

Y1 - 2016/9/1

N2 - The influence of dopant species and concentration on the grain boundary scattering of differently doped In2O3 thin films is studied by means of room temperature and temperature dependent Hall effect measurements. Barrier heights at grain boundaries EB are evaluated from temperature dependent carrier mobility taking the theoretically calculated temperature dependence of intragrain mobility into account. It is thereby shown that also samples with a negative temperature coefficient of mobility exhibit significant grain boundary barrier heights and that EB is usually underestimated when evaluated based on Seto's model. It is also shown that the most commonly used Sn doping of In2O3 with a dopant concentration > 2 wt . % SnO2 leads to significantly enhanced grain boundary scattering compared to nominally undoped, Zr-doped and H-doped films. An effect of grain boundary scattering is even observed for carrier concentrations ~ 1021 cm− 3 if the films exhibit a pronounced (100) texture. The poor grain boundary properties of highly Sn-doped In2O3 are attributed to segregation of the Sn dopants, which is also indicated by measurements of surface Sn concentration.

AB - The influence of dopant species and concentration on the grain boundary scattering of differently doped In2O3 thin films is studied by means of room temperature and temperature dependent Hall effect measurements. Barrier heights at grain boundaries EB are evaluated from temperature dependent carrier mobility taking the theoretically calculated temperature dependence of intragrain mobility into account. It is thereby shown that also samples with a negative temperature coefficient of mobility exhibit significant grain boundary barrier heights and that EB is usually underestimated when evaluated based on Seto's model. It is also shown that the most commonly used Sn doping of In2O3 with a dopant concentration > 2 wt . % SnO2 leads to significantly enhanced grain boundary scattering compared to nominally undoped, Zr-doped and H-doped films. An effect of grain boundary scattering is even observed for carrier concentrations ~ 1021 cm− 3 if the films exhibit a pronounced (100) texture. The poor grain boundary properties of highly Sn-doped In2O3 are attributed to segregation of the Sn dopants, which is also indicated by measurements of surface Sn concentration.

KW - Doping

KW - Grain boundaries

KW - Hall effect

KW - Indium oxide

KW - Segregation

UR - http://www.scopus.com/inward/record.url?scp=84961918798&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84961918798&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2016.03.022

DO - 10.1016/j.tsf.2016.03.022

M3 - Article

AN - SCOPUS:84961918798

VL - 614

SP - 62

EP - 68

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -