Influence of epitaxy on the surface conduction of diamond film

M. Kasu, M. Kubovic, A. Aleksov, N. Teofilov, Y. Taniyasu, R. Sauer, E. Kohn, T. Makimoto, N. Kobayashi

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

The influence of the crystalline and surface properties of diamond homoepitaxial layers on device properties in H-terminated surface-channel diamond field effect transistors (FETs) is investigated. Crystalline defects inside the layers result in gate current leakage in FET DC operation. We confirmed incorporation of boron acceptors inside the layers. Their residual acceptors result in buffer leakage in DC operation, but do not affect RF characteristics much. Adsorbates from the environment change the concentration of the surface holes generated by the H-termination.

Original languageEnglish
Pages (from-to)226-232
Number of pages7
JournalDiamond and Related Materials
Volume13
Issue number2
DOIs
Publication statusPublished - 2004 Feb
Externally publishedYes

Keywords

  • High frequency electronics
  • Homoepitaxy
  • Surface electronic properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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  • Cite this

    Kasu, M., Kubovic, M., Aleksov, A., Teofilov, N., Taniyasu, Y., Sauer, R., Kohn, E., Makimoto, T., & Kobayashi, N. (2004). Influence of epitaxy on the surface conduction of diamond film. Diamond and Related Materials, 13(2), 226-232. https://doi.org/10.1016/j.diamond.2003.10.025