Influence of epitaxy on the surface conduction of diamond film

M. Kasu; M. Kubovic; A. Aleksov; N. Teofilov; Y. Taniyasu; R. Sauer; E. Kohn; T. Makimoto; N. Kobayashi

doi:10.1016/j.diamond.2003.10.025

Influence of epitaxy on the surface conduction of diamond film

M. Kasu^*, M. Kubovic, A. Aleksov, N. Teofilov, Y. Taniyasu, R. Sauer, E. Kohn, T. Makimoto, N. Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

65 Citations (Scopus)

Abstract

The influence of the crystalline and surface properties of diamond homoepitaxial layers on device properties in H-terminated surface-channel diamond field effect transistors (FETs) is investigated. Crystalline defects inside the layers result in gate current leakage in FET DC operation. We confirmed incorporation of boron acceptors inside the layers. Their residual acceptors result in buffer leakage in DC operation, but do not affect RF characteristics much. Adsorbates from the environment change the concentration of the surface holes generated by the H-termination.

Original language	English
Pages (from-to)	226-232
Number of pages	7
Journal	Diamond and Related Materials
Volume	13
Issue number	2
DOIs	https://doi.org/10.1016/j.diamond.2003.10.025
Publication status	Published - 2004 Feb
Externally published	Yes

Keywords

High frequency electronics
Homoepitaxy
Surface electronic properties

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2003.10.025

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title = "Influence of epitaxy on the surface conduction of diamond film",

abstract = "The influence of the crystalline and surface properties of diamond homoepitaxial layers on device properties in H-terminated surface-channel diamond field effect transistors (FETs) is investigated. Crystalline defects inside the layers result in gate current leakage in FET DC operation. We confirmed incorporation of boron acceptors inside the layers. Their residual acceptors result in buffer leakage in DC operation, but do not affect RF characteristics much. Adsorbates from the environment change the concentration of the surface holes generated by the H-termination.",

keywords = "High frequency electronics, Homoepitaxy, Surface electronic properties",

author = "M. Kasu and M. Kubovic and A. Aleksov and N. Teofilov and Y. Taniyasu and R. Sauer and E. Kohn and T. Makimoto and N. Kobayashi",

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T1 - Influence of epitaxy on the surface conduction of diamond film

AU - Kasu, M.

AU - Kubovic, M.

AU - Aleksov, A.

AU - Teofilov, N.

AU - Taniyasu, Y.

AU - Sauer, R.

AU - Kohn, E.

AU - Makimoto, T.

AU - Kobayashi, N.

PY - 2004/2

Y1 - 2004/2

N2 - The influence of the crystalline and surface properties of diamond homoepitaxial layers on device properties in H-terminated surface-channel diamond field effect transistors (FETs) is investigated. Crystalline defects inside the layers result in gate current leakage in FET DC operation. We confirmed incorporation of boron acceptors inside the layers. Their residual acceptors result in buffer leakage in DC operation, but do not affect RF characteristics much. Adsorbates from the environment change the concentration of the surface holes generated by the H-termination.

AB - The influence of the crystalline and surface properties of diamond homoepitaxial layers on device properties in H-terminated surface-channel diamond field effect transistors (FETs) is investigated. Crystalline defects inside the layers result in gate current leakage in FET DC operation. We confirmed incorporation of boron acceptors inside the layers. Their residual acceptors result in buffer leakage in DC operation, but do not affect RF characteristics much. Adsorbates from the environment change the concentration of the surface holes generated by the H-termination.

KW - High frequency electronics

KW - Homoepitaxy

KW - Surface electronic properties

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DO - 10.1016/j.diamond.2003.10.025

M3 - Article

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SN - 0925-9635

VL - 13

SP - 226

EP - 232

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 2

ER -

Influence of epitaxy on the surface conduction of diamond film

Abstract

Keywords

ASJC Scopus subject areas

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