Influence of epitaxy on the surface conduction of diamond film

M. Kasu, M. Kubovic, A. Aleksov, N. Teofilov, Y. Taniyasu, R. Sauer, E. Kohn, Toshiki Makimoto, N. Kobayashi

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

The influence of the crystalline and surface properties of diamond homoepitaxial layers on device properties in H-terminated surface-channel diamond field effect transistors (FETs) is investigated. Crystalline defects inside the layers result in gate current leakage in FET DC operation. We confirmed incorporation of boron acceptors inside the layers. Their residual acceptors result in buffer leakage in DC operation, but do not affect RF characteristics much. Adsorbates from the environment change the concentration of the surface holes generated by the H-termination.

Original languageEnglish
Pages (from-to)226-232
Number of pages7
JournalDiamond and Related Materials
Volume13
Issue number2
DOIs
Publication statusPublished - 2004 Feb
Externally publishedYes

Fingerprint

Diamond
Diamond films
Field effect transistors
diamond films
Epitaxial growth
epitaxy
Diamonds
Crystalline materials
conduction
Boron
leakage
Adsorbates
field effect transistors
direct current
diamonds
Leakage currents
Surface properties
Buffers
surface properties
Defects

Keywords

  • High frequency electronics
  • Homoepitaxy
  • Surface electronic properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Kasu, M., Kubovic, M., Aleksov, A., Teofilov, N., Taniyasu, Y., Sauer, R., ... Kobayashi, N. (2004). Influence of epitaxy on the surface conduction of diamond film. Diamond and Related Materials, 13(2), 226-232. https://doi.org/10.1016/j.diamond.2003.10.025

Influence of epitaxy on the surface conduction of diamond film. / Kasu, M.; Kubovic, M.; Aleksov, A.; Teofilov, N.; Taniyasu, Y.; Sauer, R.; Kohn, E.; Makimoto, Toshiki; Kobayashi, N.

In: Diamond and Related Materials, Vol. 13, No. 2, 02.2004, p. 226-232.

Research output: Contribution to journalArticle

Kasu, M, Kubovic, M, Aleksov, A, Teofilov, N, Taniyasu, Y, Sauer, R, Kohn, E, Makimoto, T & Kobayashi, N 2004, 'Influence of epitaxy on the surface conduction of diamond film', Diamond and Related Materials, vol. 13, no. 2, pp. 226-232. https://doi.org/10.1016/j.diamond.2003.10.025
Kasu M, Kubovic M, Aleksov A, Teofilov N, Taniyasu Y, Sauer R et al. Influence of epitaxy on the surface conduction of diamond film. Diamond and Related Materials. 2004 Feb;13(2):226-232. https://doi.org/10.1016/j.diamond.2003.10.025
Kasu, M. ; Kubovic, M. ; Aleksov, A. ; Teofilov, N. ; Taniyasu, Y. ; Sauer, R. ; Kohn, E. ; Makimoto, Toshiki ; Kobayashi, N. / Influence of epitaxy on the surface conduction of diamond film. In: Diamond and Related Materials. 2004 ; Vol. 13, No. 2. pp. 226-232.
@article{7de85ccd32cd49e797b58915cb093438,
title = "Influence of epitaxy on the surface conduction of diamond film",
abstract = "The influence of the crystalline and surface properties of diamond homoepitaxial layers on device properties in H-terminated surface-channel diamond field effect transistors (FETs) is investigated. Crystalline defects inside the layers result in gate current leakage in FET DC operation. We confirmed incorporation of boron acceptors inside the layers. Their residual acceptors result in buffer leakage in DC operation, but do not affect RF characteristics much. Adsorbates from the environment change the concentration of the surface holes generated by the H-termination.",
keywords = "High frequency electronics, Homoepitaxy, Surface electronic properties",
author = "M. Kasu and M. Kubovic and A. Aleksov and N. Teofilov and Y. Taniyasu and R. Sauer and E. Kohn and Toshiki Makimoto and N. Kobayashi",
year = "2004",
month = "2",
doi = "10.1016/j.diamond.2003.10.025",
language = "English",
volume = "13",
pages = "226--232",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "2",

}

TY - JOUR

T1 - Influence of epitaxy on the surface conduction of diamond film

AU - Kasu, M.

AU - Kubovic, M.

AU - Aleksov, A.

AU - Teofilov, N.

AU - Taniyasu, Y.

AU - Sauer, R.

AU - Kohn, E.

AU - Makimoto, Toshiki

AU - Kobayashi, N.

PY - 2004/2

Y1 - 2004/2

N2 - The influence of the crystalline and surface properties of diamond homoepitaxial layers on device properties in H-terminated surface-channel diamond field effect transistors (FETs) is investigated. Crystalline defects inside the layers result in gate current leakage in FET DC operation. We confirmed incorporation of boron acceptors inside the layers. Their residual acceptors result in buffer leakage in DC operation, but do not affect RF characteristics much. Adsorbates from the environment change the concentration of the surface holes generated by the H-termination.

AB - The influence of the crystalline and surface properties of diamond homoepitaxial layers on device properties in H-terminated surface-channel diamond field effect transistors (FETs) is investigated. Crystalline defects inside the layers result in gate current leakage in FET DC operation. We confirmed incorporation of boron acceptors inside the layers. Their residual acceptors result in buffer leakage in DC operation, but do not affect RF characteristics much. Adsorbates from the environment change the concentration of the surface holes generated by the H-termination.

KW - High frequency electronics

KW - Homoepitaxy

KW - Surface electronic properties

UR - http://www.scopus.com/inward/record.url?scp=1542318244&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1542318244&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2003.10.025

DO - 10.1016/j.diamond.2003.10.025

M3 - Article

AN - SCOPUS:1542318244

VL - 13

SP - 226

EP - 232

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 2

ER -