Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells

Takamasa Kuroda, Atsushi Tackeuchi

Research output: Contribution to journalArticle

105 Citations (Scopus)

Abstract

We studied the influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN multiple quantum wells (MQWs) mainly in relation to a quantum-confined Stark effect. We performed a systematic time-resolved photoluminescence measurement of MQWs for various carrier densities and three different well widths (2.5, 4.0, and 5.5 nm). We show that the energy shift and the change in carrier lifetime are explained well by the free carrier screening effect which compensates for the internal electric field.

Original languageEnglish
Pages (from-to)3071-3074
Number of pages4
JournalJournal of Applied Physics
Volume92
Issue number6
DOIs
Publication statusPublished - 2002 Sep 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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