Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells

Takamasa Kuroda, Atsushi Tackeuchi

    Research output: Contribution to journalArticle

    101 Citations (Scopus)

    Abstract

    We studied the influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN multiple quantum wells (MQWs) mainly in relation to a quantum-confined Stark effect. We performed a systematic time-resolved photoluminescence measurement of MQWs for various carrier densities and three different well widths (2.5, 4.0, and 5.5 nm). We show that the energy shift and the change in carrier lifetime are explained well by the free carrier screening effect which compensates for the internal electric field.

    Original languageEnglish
    Pages (from-to)3071-3074
    Number of pages4
    JournalJournal of Applied Physics
    Volume92
    Issue number6
    DOIs
    Publication statusPublished - 2002 Sep 15

    Fingerprint

    carrier lifetime
    screening
    quantum wells
    luminescence
    life (durability)
    shift
    Stark effect
    photoluminescence
    electric fields
    energy

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells. / Kuroda, Takamasa; Tackeuchi, Atsushi.

    In: Journal of Applied Physics, Vol. 92, No. 6, 15.09.2002, p. 3071-3074.

    Research output: Contribution to journalArticle

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