Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructures

J. Qiu, Q. D. Qian, R. L. Gunshor, Masakazu Kobayashi, D. R. Menke, D. Li, N. Otsuka

Research output: Contribution to journalArticle

63 Citations (Scopus)

Abstract

Epitaxial ZnSe/epitaxial GaAs interfaces have been formed by molecular beam expitaxy and evaluated by several techniques including capacitance-voltage measurements. In the study reported here, the GaAs surface stoichiometry was systematically varied prior to the nucleation of ZnSe. A dramatic reduction of interface state density occurred when the GaAs epilayer was made As deficient. The resulting interface state densities of as-grown structures are comparable to values obtained with (Al,Ga)As/GaAs interfaces.

Original languageEnglish
Pages (from-to)1272-1274
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number13
DOIs
Publication statusPublished - 1990
Externally publishedYes

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stoichiometry
electrical measurement
molecular beams
capacitance
nucleation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructures. / Qiu, J.; Qian, Q. D.; Gunshor, R. L.; Kobayashi, Masakazu; Menke, D. R.; Li, D.; Otsuka, N.

In: Applied Physics Letters, Vol. 56, No. 13, 1990, p. 1272-1274.

Research output: Contribution to journalArticle

Qiu, J. ; Qian, Q. D. ; Gunshor, R. L. ; Kobayashi, Masakazu ; Menke, D. R. ; Li, D. ; Otsuka, N. / Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructures. In: Applied Physics Letters. 1990 ; Vol. 56, No. 13. pp. 1272-1274.
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