Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructures

J. Qiu*, Q. D. Qian, R. L. Gunshor, M. Kobayashi, D. R. Menke, D. Li, N. Otsuka

*Corresponding author for this work

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Physics & Astronomy