Influence of growth condition on superconducting characteristics of InN on sapphire (0001)

T. Inushima, T. Takenobu, M. Motokawa, K. Koide, A. Hashimoto, A. Yamamoto, Y. Saito, T. Yamaguchi, Y. Nanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm 2 V -1 s -1 and the carrier concentrations of 6 × 10 18 cm -3 ∼ 7 × 10 19 cm -3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its H c1 and H c2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages364-367
Number of pages4
Edition1
DOIs
Publication statusPublished - 2002
Externally publishedYes
Event2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany
Duration: 2002 Jul 222002 Jul 25

Other

Other2nd International Workshop on Nitride Semiconductors, IWN 2002
CountryGermany
CityAachen
Period02/7/2202/7/25

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Inushima, T., Takenobu, T., Motokawa, M., Koide, K., Hashimoto, A., Yamamoto, A., Saito, Y., Yamaguchi, T., & Nanishi, Y. (2002). Influence of growth condition on superconducting characteristics of InN on sapphire (0001). In Physica Status Solidi C: Conferences (1 ed., pp. 364-367) https://doi.org/10.1002/pssc.200390064