Influence of hydrogen on losses in silicon oxynitride planar optical waveguides

B. S. Sahu, O. P. Agnihotri, S. C. Jain, R. Mertens, Isamo Kato

    Research output: Contribution to journalArticle

    27 Citations (Scopus)

    Abstract

    We have examined the influence of bonded hydrogen on the losses in silicon oxynitride (SiON) planar optical waveguides on silicon substrates having a silicon dioxide buffer layer. In the SiON layer grown by plasma enhanced chemical vapour deposition, hydrogen was mainly bonded to silicon as evidenced by strong absorption at 2160 cm-1. The concentration of bonded hydrogen was reduced from 1.2×1022 cm-3 to 5×1021 cm-3 as the substrate temperature was raised from 100 to 300 °C. The corresponding change in the loss was from 1.5 to 1.2 dB cm-1 at 632.8 nm.

    Original languageEnglish
    JournalSemiconductor Science and Technology
    Volume15
    Issue number3
    DOIs
    Publication statusPublished - 2000 Mar

    Fingerprint

    Planar waveguides
    oxynitrides
    Optical waveguides
    Silicon
    optical waveguides
    Hydrogen
    silicon
    hydrogen
    Substrates
    Buffer layers
    Plasma enhanced chemical vapor deposition
    Silicon Dioxide
    buffers
    Silica
    vapor deposition
    silicon dioxide
    Temperature
    temperature

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Materials Science(all)
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Influence of hydrogen on losses in silicon oxynitride planar optical waveguides. / Sahu, B. S.; Agnihotri, O. P.; Jain, S. C.; Mertens, R.; Kato, Isamo.

    In: Semiconductor Science and Technology, Vol. 15, No. 3, 03.2000.

    Research output: Contribution to journalArticle

    Sahu, B. S. ; Agnihotri, O. P. ; Jain, S. C. ; Mertens, R. ; Kato, Isamo. / Influence of hydrogen on losses in silicon oxynitride planar optical waveguides. In: Semiconductor Science and Technology. 2000 ; Vol. 15, No. 3.
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