Influence of hydrogen on losses in silicon oxynitride planar optical waveguides

B. S. Sahu, O. P. Agnihotri, S. C. Jain, R. Mertens, Isamo Kato

    Research output: Contribution to journalArticle

    28 Citations (Scopus)

    Abstract

    We have examined the influence of bonded hydrogen on the losses in silicon oxynitride (SiON) planar optical waveguides on silicon substrates having a silicon dioxide buffer layer. In the SiON layer grown by plasma enhanced chemical vapour deposition, hydrogen was mainly bonded to silicon as evidenced by strong absorption at 2160 cm-1. The concentration of bonded hydrogen was reduced from 1.2×1022 cm-3 to 5×1021 cm-3 as the substrate temperature was raised from 100 to 300 °C. The corresponding change in the loss was from 1.5 to 1.2 dB cm-1 at 632.8 nm.

    Original languageEnglish
    JournalSemiconductor Science and Technology
    Volume15
    Issue number3
    DOIs
    Publication statusPublished - 2000 Mar

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Materials Science(all)
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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