Influence of hydrogen on losses in silicon oxynitride planar optical waveguides

B. S. Sahu, O. P. Agnihotri, S. C. Jain, R. Mertens, Isamu Kato

    Research output: Contribution to journalArticle

    Abstract

    We have examined the influence of bonded hydrogen on the losses in silicon oxynitride (SiON) planer optical waveguides on silicon substrates having silicon dioxide buffer layer. In the SiON layer grown by plasma enhanced chemical vapor deposition, hydrogen was mainly bonded to silicon as evidenced by strong absorption at 2160 cm-1. The concentration of bonded hydrogen was reduced from 1.2×1022 cm-3 to 5×1021 cm-3 as the substrate temperature was raised from 100 to 300 °C. The corresponding change in the loss was from 1.5 to 1.2 dB/cm at 6328 nm.

    Original languageEnglish
    JournalUnknown Journal
    Volume3975
    Publication statusPublished - 2000

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    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Condensed Matter Physics

    Cite this

    Sahu, B. S., Agnihotri, O. P., Jain, S. C., Mertens, R., & Kato, I. (2000). Influence of hydrogen on losses in silicon oxynitride planar optical waveguides. Unknown Journal, 3975.