Influence of hydrogen on losses in silicon oxynitride planar optical waveguides

B. S. Sahu; O. P. Agnihotri; S. C. Jain; R. Mertens; Isamu Kato

Influence of hydrogen on losses in silicon oxynitride planar optical waveguides

B. S. Sahu^*, O. P. Agnihotri, S. C. Jain, R. Mertens, Isamu Kato

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We have examined the influence of bonded hydrogen on the losses in silicon oxynitride (SiON) planer optical waveguides on silicon substrates having silicon dioxide buffer layer. In the SiON layer grown by plasma enhanced chemical vapor deposition, hydrogen was mainly bonded to silicon as evidenced by strong absorption at 2160 cm^-1. The concentration of bonded hydrogen was reduced from 1.2×10²² cm^-3 to 5×10²¹ cm^-3 as the substrate temperature was raised from 100 to 300 °C. The corresponding change in the loss was from 1.5 to 1.2 dB/cm at 6328 nm.

Original language	English
Journal	Unknown Journal
Volume	3975
Publication status	Published - 2000

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

@article{5cfda106f67449288e73e3d12aecbebd,

title = "Influence of hydrogen on losses in silicon oxynitride planar optical waveguides",

abstract = "We have examined the influence of bonded hydrogen on the losses in silicon oxynitride (SiON) planer optical waveguides on silicon substrates having silicon dioxide buffer layer. In the SiON layer grown by plasma enhanced chemical vapor deposition, hydrogen was mainly bonded to silicon as evidenced by strong absorption at 2160 cm-1. The concentration of bonded hydrogen was reduced from 1.2×1022 cm-3 to 5×1021 cm-3 as the substrate temperature was raised from 100 to 300 °C. The corresponding change in the loss was from 1.5 to 1.2 dB/cm at 6328 nm.",

author = "Sahu, {B. S.} and Agnihotri, {O. P.} and Jain, {S. C.} and R. Mertens and Isamu Kato",

year = "2000",

language = "English",

volume = "3975",

journal = "Nuclear Physics A",

issn = "0375-9474",

publisher = "Elsevier",

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TY - JOUR

T1 - Influence of hydrogen on losses in silicon oxynitride planar optical waveguides

AU - Sahu, B. S.

AU - Agnihotri, O. P.

AU - Jain, S. C.

AU - Mertens, R.

AU - Kato, Isamu

PY - 2000

Y1 - 2000

N2 - We have examined the influence of bonded hydrogen on the losses in silicon oxynitride (SiON) planer optical waveguides on silicon substrates having silicon dioxide buffer layer. In the SiON layer grown by plasma enhanced chemical vapor deposition, hydrogen was mainly bonded to silicon as evidenced by strong absorption at 2160 cm-1. The concentration of bonded hydrogen was reduced from 1.2×1022 cm-3 to 5×1021 cm-3 as the substrate temperature was raised from 100 to 300 °C. The corresponding change in the loss was from 1.5 to 1.2 dB/cm at 6328 nm.

AB - We have examined the influence of bonded hydrogen on the losses in silicon oxynitride (SiON) planer optical waveguides on silicon substrates having silicon dioxide buffer layer. In the SiON layer grown by plasma enhanced chemical vapor deposition, hydrogen was mainly bonded to silicon as evidenced by strong absorption at 2160 cm-1. The concentration of bonded hydrogen was reduced from 1.2×1022 cm-3 to 5×1021 cm-3 as the substrate temperature was raised from 100 to 300 °C. The corresponding change in the loss was from 1.5 to 1.2 dB/cm at 6328 nm.

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M3 - Article

AN - SCOPUS:0033719123

SN - 0375-9474

VL - 3975

JO - Nuclear Physics A

JF - Nuclear Physics A

ER -

Influence of hydrogen on losses in silicon oxynitride planar optical waveguides

Abstract

ASJC Scopus subject areas

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