Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells

S. F. Chichibu, T. Onuma, Takayuki Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura

    Research output: Contribution to journalArticle

    46 Citations (Scopus)

    Abstract

    The influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells was presented. The importance of fast exciton localization and slow nonradiative recombination was also discussed. It was found that the effective localization depth increased with an increase in InN mole fraction, which give rise to fast exciton localization.

    Original languageEnglish
    Pages (from-to)2051-2054
    Number of pages4
    JournalJournal of Applied Physics
    Volume93
    Issue number4
    DOIs
    Publication statusPublished - 2003 Feb 15

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    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

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    Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells. / Chichibu, S. F.; Onuma, T.; Sota, Takayuki; DenBaars, S. P.; Nakamura, S.; Kitamura, T.; Ishida, Y.; Okumura, H.

    In: Journal of Applied Physics, Vol. 93, No. 4, 15.02.2003, p. 2051-2054.

    Research output: Contribution to journalArticle

    Chichibu, S. F. ; Onuma, T. ; Sota, Takayuki ; DenBaars, S. P. ; Nakamura, S. ; Kitamura, T. ; Ishida, Y. ; Okumura, H. / Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 4. pp. 2051-2054.
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    AU - Chichibu, S. F.

    AU - Onuma, T.

    AU - Sota, Takayuki

    AU - DenBaars, S. P.

    AU - Nakamura, S.

    AU - Kitamura, T.

    AU - Ishida, Y.

    AU - Okumura, H.

    PY - 2003/2/15

    Y1 - 2003/2/15

    N2 - The influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells was presented. The importance of fast exciton localization and slow nonradiative recombination was also discussed. It was found that the effective localization depth increased with an increase in InN mole fraction, which give rise to fast exciton localization.

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