Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells

S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

The influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells was presented. The importance of fast exciton localization and slow nonradiative recombination was also discussed. It was found that the effective localization depth increased with an increase in InN mole fraction, which give rise to fast exciton localization.

Original languageEnglish
Pages (from-to)2051-2054
Number of pages4
JournalJournal of Applied Physics
Volume93
Issue number4
DOIs
Publication statusPublished - 2003 Feb 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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