Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450 nm

Takeyoshi Onuma, Shigefusa F. Chichibu, Toyomi Aoyama, Kiyomi Nakajima, Parhat Ahmet, Takashi Azuhata, Toyohiro Chikyow, Takayuki Sota, Shin Ichi Nagahama, Takashi Mukai

    Research output: Contribution to journalArticle

    16 Citations (Scopus)

    Abstract

    Optical and structural properties of an InGaN double-quantum-well (DQW) laser diode (LD) wafer that lased at 450 nm were investigated to discuss an enormous impact of a polarization-induced electric field on the recombination dynamics in InGaN quantum structures. The quantum-well (QW) structure was shown to have the well thickness as thin as approximately 1 nm and InN molar fraction x of approximately 14%. The gross effective electric field in the QW (F QW) was estimated to be 490kV/cm from the Franz-Keldysh oscillation (FKO) period in the electroreflectance (ER) spectrum, implying that an internal piezoelectric field (Fpiz) of approximately 1.4MV/cm was cancelled by the pn junction built-in field (Fbi) and Coulomb screening due to carriers in the DQW. The magnitude of FQW can be further weakened by applying reverse bias (VR) on the junction; the decrease in the photoluminescence (PL) lifetime at low temperature measured under VR was explained to be due to a recovery of electron-hole wavefunction overlap for small VR (|VR|<4 V), and due mainly to the tunneling escape of carriers through the barriers for larger VR. By applying an appropriate VR smaller than 4V, electron-hole wavefunction overlap, which had been separated vertically along the c-axis due to quantum-confined Stark effect, could be partially recovered, and then the time-resolved PL signals exhibited a less-pronounced stretched exponential decay, giving a scaling parameter (0β) of 0.85 and effective in-plane localization depth (E0) of 40-50 meV for the spontaneous emission. These values were closer to those of much homogeneous QWs compared to those reported previously for InGaN QWs having similar InN molar fractions. The use of very thin QWs is considered to bring easier Coulomb screening of F QW and population inversion under high excitation conditions.

    Original languageEnglish
    Pages (from-to)7276-7283
    Number of pages8
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume42
    Issue number12
    Publication statusPublished - 2003 Dec

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    Quantum well lasers
    virtual reality
    quantum well lasers
    Excitons
    Semiconductor quantum wells
    Semiconductor lasers
    semiconductor lasers
    Electric fields
    excitons
    wafers
    Wave functions
    electric fields
    Photoluminescence
    Screening
    Stark effect
    Electrons
    Spontaneous emission
    quantum wells
    Structural properties
    screening

    Keywords

    • Exciton localization
    • Franz-Keldysh oscillation
    • InGaN
    • LD
    • Piezoelectric field
    • Quantum-confined Stark effect
    • Recombination dynamics

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450 nm. / Onuma, Takeyoshi; Chichibu, Shigefusa F.; Aoyama, Toyomi; Nakajima, Kiyomi; Ahmet, Parhat; Azuhata, Takashi; Chikyow, Toyohiro; Sota, Takayuki; Nagahama, Shin Ichi; Mukai, Takashi.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 12, 12.2003, p. 7276-7283.

    Research output: Contribution to journalArticle

    Onuma, Takeyoshi ; Chichibu, Shigefusa F. ; Aoyama, Toyomi ; Nakajima, Kiyomi ; Ahmet, Parhat ; Azuhata, Takashi ; Chikyow, Toyohiro ; Sota, Takayuki ; Nagahama, Shin Ichi ; Mukai, Takashi. / Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450 nm. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2003 ; Vol. 42, No. 12. pp. 7276-7283.
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    abstract = "Optical and structural properties of an InGaN double-quantum-well (DQW) laser diode (LD) wafer that lased at 450 nm were investigated to discuss an enormous impact of a polarization-induced electric field on the recombination dynamics in InGaN quantum structures. The quantum-well (QW) structure was shown to have the well thickness as thin as approximately 1 nm and InN molar fraction x of approximately 14{\%}. The gross effective electric field in the QW (F QW) was estimated to be 490kV/cm from the Franz-Keldysh oscillation (FKO) period in the electroreflectance (ER) spectrum, implying that an internal piezoelectric field (Fpiz) of approximately 1.4MV/cm was cancelled by the pn junction built-in field (Fbi) and Coulomb screening due to carriers in the DQW. The magnitude of FQW can be further weakened by applying reverse bias (VR) on the junction; the decrease in the photoluminescence (PL) lifetime at low temperature measured under VR was explained to be due to a recovery of electron-hole wavefunction overlap for small VR (|VR|<4 V), and due mainly to the tunneling escape of carriers through the barriers for larger VR. By applying an appropriate VR smaller than 4V, electron-hole wavefunction overlap, which had been separated vertically along the c-axis due to quantum-confined Stark effect, could be partially recovered, and then the time-resolved PL signals exhibited a less-pronounced stretched exponential decay, giving a scaling parameter (0β) of 0.85 and effective in-plane localization depth (E0) of 40-50 meV for the spontaneous emission. These values were closer to those of much homogeneous QWs compared to those reported previously for InGaN QWs having similar InN molar fractions. The use of very thin QWs is considered to bring easier Coulomb screening of F QW and population inversion under high excitation conditions.",
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    author = "Takeyoshi Onuma and Chichibu, {Shigefusa F.} and Toyomi Aoyama and Kiyomi Nakajima and Parhat Ahmet and Takashi Azuhata and Toyohiro Chikyow and Takayuki Sota and Nagahama, {Shin Ichi} and Takashi Mukai",
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    AU - Aoyama, Toyomi

    AU - Nakajima, Kiyomi

    AU - Ahmet, Parhat

    AU - Azuhata, Takashi

    AU - Chikyow, Toyohiro

    AU - Sota, Takayuki

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