Abstract
Plasma parameters of Ar/SiH4 plasma were measured as a function of dc bias in a double-tubed coaxial line-type microwave plasma chemical vapor deposition (CVD) apparatus. The results indicate that it is possible to control the ion bombardment energy without affecting either the gas phase reaction or ion flux density incident to the substrate. Hydrogenated amorphous silicon films were deposited as a function of the ion bombardment energy and characteristics of the deposited films were investigated. The results indicate that the ion bombardment improves film density, bonding characteristics of hydrogen, and optical band gap but increases the concentration of dangling bonds due to Ar ion implantation. The ion bombardment not only causes the heating of the films but also induces sputtering and ion implantation.
| Original language | English |
|---|---|
| Pages (from-to) | 70-78 |
| Number of pages | 9 |
| Journal | Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) |
| Volume | 78 |
| Issue number | 2 |
| Publication status | Published - 1995 Feb |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Influence of ion bombardment on a-Si : H films fabricated by plasma chemical vapor deposition. / Kato, Isamu; Yoneda, Toshiyuki; Matsushita, Toru.
In: Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), Vol. 78, No. 2, 02.1995, p. 70-78.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Influence of ion bombardment on a-Si
T2 - H films fabricated by plasma chemical vapor deposition
AU - Kato, Isamu
AU - Yoneda, Toshiyuki
AU - Matsushita, Toru
PY - 1995/2
Y1 - 1995/2
N2 - Plasma parameters of Ar/SiH4 plasma were measured as a function of dc bias in a double-tubed coaxial line-type microwave plasma chemical vapor deposition (CVD) apparatus. The results indicate that it is possible to control the ion bombardment energy without affecting either the gas phase reaction or ion flux density incident to the substrate. Hydrogenated amorphous silicon films were deposited as a function of the ion bombardment energy and characteristics of the deposited films were investigated. The results indicate that the ion bombardment improves film density, bonding characteristics of hydrogen, and optical band gap but increases the concentration of dangling bonds due to Ar ion implantation. The ion bombardment not only causes the heating of the films but also induces sputtering and ion implantation.
AB - Plasma parameters of Ar/SiH4 plasma were measured as a function of dc bias in a double-tubed coaxial line-type microwave plasma chemical vapor deposition (CVD) apparatus. The results indicate that it is possible to control the ion bombardment energy without affecting either the gas phase reaction or ion flux density incident to the substrate. Hydrogenated amorphous silicon films were deposited as a function of the ion bombardment energy and characteristics of the deposited films were investigated. The results indicate that the ion bombardment improves film density, bonding characteristics of hydrogen, and optical band gap but increases the concentration of dangling bonds due to Ar ion implantation. The ion bombardment not only causes the heating of the films but also induces sputtering and ion implantation.
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M3 - Article
VL - 78
SP - 70
EP - 78
JO - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
JF - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
SN - 8756-663X
IS - 2
ER -