Influence of ion bombardment on a-Si

H films fabricated by plasma chemical vapor deposition

Isamu Kato, Toshiyuki Yoneda, Toru Matsushita

Research output: Contribution to journalArticle

Abstract

Plasma parameters of Ar/SiH4 plasma were measured as a function of dc bias in a double-tubed coaxial line-type microwave plasma chemical vapor deposition (CVD) apparatus. The results indicate that it is possible to control the ion bombardment energy without affecting either the gas phase reaction or ion flux density incident to the substrate. Hydrogenated amorphous silicon films were deposited as a function of the ion bombardment energy and characteristics of the deposited films were investigated. The results indicate that the ion bombardment improves film density, bonding characteristics of hydrogen, and optical band gap but increases the concentration of dangling bonds due to Ar ion implantation. The ion bombardment not only causes the heating of the films but also induces sputtering and ion implantation.

Original languageEnglish
Pages (from-to)70-78
Number of pages9
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume78
Issue number2
Publication statusPublished - 1995 Feb

Fingerprint

Ion bombardment
bombardment
Chemical vapor deposition
vapor deposition
Plasmas
Ion implantation
ions
ion implantation
Dangling bonds
Optical band gaps
Amorphous silicon
Sputtering
silicon films
Microwaves
amorphous silicon
Fluxes
implantation
Heating
Hydrogen
flux density

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Influence of ion bombardment on a-Si : H films fabricated by plasma chemical vapor deposition. / Kato, Isamu; Yoneda, Toshiyuki; Matsushita, Toru.

In: Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), Vol. 78, No. 2, 02.1995, p. 70-78.

Research output: Contribution to journalArticle

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