Coverage of the (Formula presented)-reconstructed region on quenched Si(111) surfaces has been compared for two types of Si wafers with different oxygen concentration, Czochralski and modified float zone (m-FZ) wafers. The m-FZ wafer clearly showed the lower coverage, which suggested that oxygen had some influence on the formation of a (Formula presented) structure. The activation energy of formation of the (Formula presented) structure has been estimated to be 2.4 eV.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1998 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics