Influence of oxygen on the formation of domains studied by scanning tunneling microscopy

T. Ishimaru; T. Hoshino; H. Kawada; K. Shimada; T. Watanabe; I. Ohdomari

doi:10.1103/PhysRevB.58.9863

Influence of oxygen on the formation of domains studied by scanning tunneling microscopy

T. Ishimaru, T. Hoshino, H. Kawada, K. Shimada, T. Watanabe, I. Ohdomari

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Coverage of the (Formula presented)-reconstructed region on quenched Si(111) surfaces has been compared for two types of Si wafers with different oxygen concentration, Czochralski and modified float zone (m-FZ) wafers. The m-FZ wafer clearly showed the lower coverage, which suggested that oxygen had some influence on the formation of a (Formula presented) structure. The activation energy of formation of the (Formula presented) structure has been estimated to be 2.4 eV.

Original language	English
Pages (from-to)	9863-9866
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	58
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.58.9863
Publication status	Published - 1998 Jan 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.58.9863

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AU - Ishimaru, T.

AU - Hoshino, T.

AU - Kawada, H.

AU - Shimada, K.

AU - Watanabe, T.

AU - Ohdomari, I.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Coverage of the (Formula presented)-reconstructed region on quenched Si(111) surfaces has been compared for two types of Si wafers with different oxygen concentration, Czochralski and modified float zone (m-FZ) wafers. The m-FZ wafer clearly showed the lower coverage, which suggested that oxygen had some influence on the formation of a (Formula presented) structure. The activation energy of formation of the (Formula presented) structure has been estimated to be 2.4 eV.

AB - Coverage of the (Formula presented)-reconstructed region on quenched Si(111) surfaces has been compared for two types of Si wafers with different oxygen concentration, Czochralski and modified float zone (m-FZ) wafers. The m-FZ wafer clearly showed the lower coverage, which suggested that oxygen had some influence on the formation of a (Formula presented) structure. The activation energy of formation of the (Formula presented) structure has been estimated to be 2.4 eV.

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Influence of oxygen on the formation of domains studied by scanning tunneling microscopy

Abstract

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