Influence of oxygen on the formation of domains studied by scanning tunneling microscopy

T. Ishimaru, T. Hoshino, H. Kawada, K. Shimada, T. Watanabe, I. Ohdomari

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Coverage of the (Formula presented)-reconstructed region on quenched Si(111) surfaces has been compared for two types of Si wafers with different oxygen concentration, Czochralski and modified float zone (m-FZ) wafers. The m-FZ wafer clearly showed the lower coverage, which suggested that oxygen had some influence on the formation of a (Formula presented) structure. The activation energy of formation of the (Formula presented) structure has been estimated to be 2.4 eV.

Original languageEnglish
Pages (from-to)9863-9866
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume58
Issue number15
DOIs
Publication statusPublished - 1998 Jan 1

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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