Influence of oxygen on the formation of Si(111)-7 × 7 domains studied by scanning tunneling microscopy

T. Ishimaru, T. Hoshino, Hiroyuki Kawada, K. Shimada, Takanobu Watanabe, I. Ohdomari

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    Coverage of the 7 × 7-reconstructed region on quenched Si(111) surfaces has been compared for two types of Si wafers with different oxygen concentration, Czochralski and modified float zone (m-FZ) wafers. The m-FZ wafer clearly showed the lower coverage, which suggested that oxygen had some influence on the formation of a 7 × 7 structure. The activation energy of formation of the 7 × 7 structure has been estimated to be 2.4 eV.

    Original languageEnglish
    Pages (from-to)9863-9866
    Number of pages4
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume58
    Issue number15
    Publication statusPublished - 1998 Oct 15

    Fingerprint

    Scanning tunneling microscopy
    scanning tunneling microscopy
    float zones
    wafers
    Oxygen
    oxygen
    Activation energy
    energy of formation
    activation energy

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Influence of oxygen on the formation of Si(111)-7 × 7 domains studied by scanning tunneling microscopy. / Ishimaru, T.; Hoshino, T.; Kawada, Hiroyuki; Shimada, K.; Watanabe, Takanobu; Ohdomari, I.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 58, No. 15, 15.10.1998, p. 9863-9866.

    Research output: Contribution to journalArticle

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    AU - Watanabe, Takanobu

    AU - Ohdomari, I.

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