Influence of Pt atoms on the low temperature formation of epitaxial Pd monosilicide

Hiroshi Kawarada, K. Mizugaki, I. Ohdomari

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    The effect of Pt concentration in Pd thin films on the nucleation and growth of PdSi and PdxPt1-xSi (ternary monosilicide) has been investigated by transmission electron microscopy (TEM). Low concentration of Pt (10 at. %) in Pd film enhances PdSi formation at lower temperature than previously reported. It has been proposed that PdSi formation is governed by its slow nucleation. However, in our studies, the nucleation of PtSi, which is substituted for that of PdSi, triggers the subsequent PdSi growth at low temperatures. High concentration of Pt (55 at. %) in Pd-Pt alloy film lowers the temperature of the phase transformation from metal-rich silicide to monosilicide (PdxPt1-xSi). The temperature is the same as that of PtSi formation. In both cases, the monosilicide layers (about 20 nm) have an epitaxial relationship with (111) Si substrates.

    Original languageEnglish
    Pages (from-to)244-248
    Number of pages5
    JournalJournal of Applied Physics
    Volume57
    Issue number2
    DOIs
    Publication statusPublished - 1985

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    nucleation
    atoms
    phase transformations
    low concentrations
    actuators
    transmission electron microscopy
    temperature
    thin films
    metals

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Influence of Pt atoms on the low temperature formation of epitaxial Pd monosilicide. / Kawarada, Hiroshi; Mizugaki, K.; Ohdomari, I.

    In: Journal of Applied Physics, Vol. 57, No. 2, 1985, p. 244-248.

    Research output: Contribution to journalArticle

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    abstract = "The effect of Pt concentration in Pd thin films on the nucleation and growth of PdSi and PdxPt1-xSi (ternary monosilicide) has been investigated by transmission electron microscopy (TEM). Low concentration of Pt (10 at. {\%}) in Pd film enhances PdSi formation at lower temperature than previously reported. It has been proposed that PdSi formation is governed by its slow nucleation. However, in our studies, the nucleation of PtSi, which is substituted for that of PdSi, triggers the subsequent PdSi growth at low temperatures. High concentration of Pt (55 at. {\%}) in Pd-Pt alloy film lowers the temperature of the phase transformation from metal-rich silicide to monosilicide (PdxPt1-xSi). The temperature is the same as that of PtSi formation. In both cases, the monosilicide layers (about 20 nm) have an epitaxial relationship with (111) Si substrates.",
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