Influence of Pt atoms on the low temperature formation of epitaxial Pd monosilicide

H. Kawarada; K. Mizugaki; I. Ohdomari

doi:10.1063/1.334796

Influence of Pt atoms on the low temperature formation of epitaxial Pd monosilicide

H. Kawarada^*, K. Mizugaki, I. Ohdomari

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The effect of Pt concentration in Pd thin films on the nucleation and growth of PdSi and Pd_xPt_1-xSi (ternary monosilicide) has been investigated by transmission electron microscopy (TEM). Low concentration of Pt (10 at. %) in Pd film enhances PdSi formation at lower temperature than previously reported. It has been proposed that PdSi formation is governed by its slow nucleation. However, in our studies, the nucleation of PtSi, which is substituted for that of PdSi, triggers the subsequent PdSi growth at low temperatures. High concentration of Pt (55 at. %) in Pd-Pt alloy film lowers the temperature of the phase transformation from metal-rich silicide to monosilicide (Pd_xPt_1-xSi). The temperature is the same as that of PtSi formation. In both cases, the monosilicide layers (about 20 nm) have an epitaxial relationship with (111) Si substrates.

Original language	English
Pages (from-to)	244-248
Number of pages	5
Journal	Journal of Applied Physics
Volume	57
Issue number	2
DOIs	https://doi.org/10.1063/1.334796
Publication status	Published - 1985

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "The effect of Pt concentration in Pd thin films on the nucleation and growth of PdSi and PdxPt1-xSi (ternary monosilicide) has been investigated by transmission electron microscopy (TEM). Low concentration of Pt (10 at. %) in Pd film enhances PdSi formation at lower temperature than previously reported. It has been proposed that PdSi formation is governed by its slow nucleation. However, in our studies, the nucleation of PtSi, which is substituted for that of PdSi, triggers the subsequent PdSi growth at low temperatures. High concentration of Pt (55 at. %) in Pd-Pt alloy film lowers the temperature of the phase transformation from metal-rich silicide to monosilicide (PdxPt1-xSi). The temperature is the same as that of PtSi formation. In both cases, the monosilicide layers (about 20 nm) have an epitaxial relationship with (111) Si substrates.",

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T1 - Influence of Pt atoms on the low temperature formation of epitaxial Pd monosilicide

AU - Kawarada, H.

AU - Mizugaki, K.

AU - Ohdomari, I.

PY - 1985

Y1 - 1985

N2 - The effect of Pt concentration in Pd thin films on the nucleation and growth of PdSi and PdxPt1-xSi (ternary monosilicide) has been investigated by transmission electron microscopy (TEM). Low concentration of Pt (10 at. %) in Pd film enhances PdSi formation at lower temperature than previously reported. It has been proposed that PdSi formation is governed by its slow nucleation. However, in our studies, the nucleation of PtSi, which is substituted for that of PdSi, triggers the subsequent PdSi growth at low temperatures. High concentration of Pt (55 at. %) in Pd-Pt alloy film lowers the temperature of the phase transformation from metal-rich silicide to monosilicide (PdxPt1-xSi). The temperature is the same as that of PtSi formation. In both cases, the monosilicide layers (about 20 nm) have an epitaxial relationship with (111) Si substrates.

AB - The effect of Pt concentration in Pd thin films on the nucleation and growth of PdSi and PdxPt1-xSi (ternary monosilicide) has been investigated by transmission electron microscopy (TEM). Low concentration of Pt (10 at. %) in Pd film enhances PdSi formation at lower temperature than previously reported. It has been proposed that PdSi formation is governed by its slow nucleation. However, in our studies, the nucleation of PtSi, which is substituted for that of PdSi, triggers the subsequent PdSi growth at low temperatures. High concentration of Pt (55 at. %) in Pd-Pt alloy film lowers the temperature of the phase transformation from metal-rich silicide to monosilicide (PdxPt1-xSi). The temperature is the same as that of PtSi formation. In both cases, the monosilicide layers (about 20 nm) have an epitaxial relationship with (111) Si substrates.

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Influence of Pt atoms on the low temperature formation of epitaxial Pd monosilicide

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