Influence of structural parameters on electrical characteristics of schottky tunneling field-effect transistor and its scalability

Yan Wu, Chunmeng Dou, Feng Wei, Kuniyuki Kakushima, Kenji Ohmori, Parhat Ahmet, Takanobu Watanabe, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Keisaku Yamada, Yoshinori Kataoka, Takeo Hattori, Hiroshi Iwai

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The influence of structural parameters, including the Schottky barrier height for electron (Bn) and channel doping (Na), on the electrical characteristics of a scaled Schottky barrier tunneling FET (SBTFET) have been clarified by numerical device simulation. The thermionic emission current (ITH) as well as the tunneling current (ITN) have been considered as the main electron injections at the source edge. Simulation results have revealed that the main conduction is ITN in the region near and above the threshold voltage (Vth). As tunneling probability is determined by Bn and the width of the triangular potential barrier at the source edge, a lower Bn with higher Na results in a better subthreshold swing (SS) with high on-state drive current (ION) at a gate length (Lg) of 50 nm. With Lg scaling down to 10 nm, however, a lower Bn has shown an increased offstate leakage current (IOFF) due to the short-channel effect (SCE), while a larger Bn can suppress the IOFF at the cost of ION. Therefore, considering SS with ION and IOFF ratio, it can be concluded that an optimum Bn exists for short-channel devices. The SBTFET showed good subthreshold performance and higher ION=IOFF than the conventional silicon-on-insulator (SOI) MOSFET in 10nm region with the Schottky barrier height optimization.

Original languageEnglish
Article number04CC28
JournalJapanese journal of applied physics
Volume52
Issue number4 PART 2
DOIs
Publication statusPublished - 2013 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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