Infrared absorption induced by field-effect doping from poly(3-alkylthiophene)s

Yukio Furukawa, H. Takao, J. Yamamoto, S. Furukawa

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    Field-induced infrared absorption spectra from the metal-insulator- semiconductor diodes fabricated with regioregular poly(3-hexylthiophene) or poly(3-octylthiophene) have been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The obtained spectra have been attributed to positive polarons generated at the interface with the insulator (aluminum oxide) layer in the range of minus gate voltage.

    Original languageEnglish
    Pages (from-to)341-342
    Number of pages2
    JournalSynthetic Metals
    Volume135-136
    DOIs
    Publication statusPublished - 2003 Apr 4

    Fingerprint

    Semiconductor diodes
    Polarons
    Aluminum Oxide
    Infrared absorption
    Absorption spectroscopy
    infrared absorption
    Absorption spectra
    Metals
    Doping (additives)
    Infrared radiation
    Aluminum
    semiconductor diodes
    Oxides
    infrared reflection
    Electric potential
    polarons
    MIS (semiconductors)
    absorption spectroscopy
    infrared spectra
    aluminum oxides

    Keywords

    • Infrared and Raman spectroscopy
    • Metal-insulator-semiconductor diodes
    • Polythiophene and derivatives

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Polymers and Plastics

    Cite this

    Infrared absorption induced by field-effect doping from poly(3-alkylthiophene)s. / Furukawa, Yukio; Takao, H.; Yamamoto, J.; Furukawa, S.

    In: Synthetic Metals, Vol. 135-136, 04.04.2003, p. 341-342.

    Research output: Contribution to journalArticle

    Furukawa, Yukio ; Takao, H. ; Yamamoto, J. ; Furukawa, S. / Infrared absorption induced by field-effect doping from poly(3-alkylthiophene)s. In: Synthetic Metals. 2003 ; Vol. 135-136. pp. 341-342.
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