Infrared absorption induced by field-effect doping from poly(3-alkylthiophene)s

Yukio Furukawa, H. Takao, J. Yamamoto, S. Furukawa

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    Field-induced infrared absorption spectra from the metal-insulator- semiconductor diodes fabricated with regioregular poly(3-hexylthiophene) or poly(3-octylthiophene) have been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The obtained spectra have been attributed to positive polarons generated at the interface with the insulator (aluminum oxide) layer in the range of minus gate voltage.

    Original languageEnglish
    Pages (from-to)341-342
    Number of pages2
    JournalSynthetic Metals
    Volume135-136
    DOIs
    Publication statusPublished - 2003 Apr 4

      Fingerprint

    Keywords

    • Infrared and Raman spectroscopy
    • Metal-insulator-semiconductor diodes
    • Polythiophene and derivatives

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Polymers and Plastics

    Cite this