Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene)

Hiroki Takao; Yukio Furukawa

doi:10.1246/cl.2003.1168

Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene)

Hiroki Takao, Yukio Furukawa

School of Advanced Science and Engineering

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

Infrared absorption induced by field effect from a metal-insulator- semiconductor diode with an Au/aluminum oxide/ regioregular poly(3- hexylthiophene) structure has been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The observed bands have been attributed to carriers (positive polarons) injected into the polymer layer and accumulated near the surface of the layer.

Original language	English
Pages (from-to)	1168-1169
Number of pages	2
Journal	Chemistry Letters
Volume	32
Issue number	12
DOIs	https://doi.org/10.1246/cl.2003.1168
Publication status	Published - 2003 Dec 5

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ASJC Scopus subject areas

Chemistry(all)

Cite this

Takao, H., & Furukawa, Y. (2003). Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene). Chemistry Letters, 32(12), 1168-1169. https://doi.org/10.1246/cl.2003.1168

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10.1246/cl.2003.1168