Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene)

Hiroki Takao, Yukio Furukawa

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Abstract

Infrared absorption induced by field effect from a metal-insulator- semiconductor diode with an Au/aluminum oxide/ regioregular poly(3- hexylthiophene) structure has been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The observed bands have been attributed to carriers (positive polarons) injected into the polymer layer and accumulated near the surface of the layer.

Original languageEnglish
Pages (from-to)1168-1169
Number of pages2
JournalChemistry Letters
Volume32
Issue number12
DOIs
Publication statusPublished - 2003 Dec 5

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ASJC Scopus subject areas

  • Chemistry(all)

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