Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene)

Hiroki Takao, Yukio Furukawa

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    Infrared absorption induced by field effect from a metal-insulator- semiconductor diode with an Au/aluminum oxide/ regioregular poly(3- hexylthiophene) structure has been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The observed bands have been attributed to carriers (positive polarons) injected into the polymer layer and accumulated near the surface of the layer.

    Original languageEnglish
    Pages (from-to)1168-1169
    Number of pages2
    JournalChemistry Letters
    Volume32
    Issue number12
    Publication statusPublished - 2003 Dec 5

    Fingerprint

    Semiconductor diodes
    Polarons
    Aluminum Oxide
    Infrared absorption
    Absorption spectroscopy
    Polymers
    Metals
    Infrared radiation
    poly(3-hexylthiophene)

    ASJC Scopus subject areas

    • Chemistry(all)

    Cite this

    Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene). / Takao, Hiroki; Furukawa, Yukio.

    In: Chemistry Letters, Vol. 32, No. 12, 05.12.2003, p. 1168-1169.

    Research output: Contribution to journalArticle

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