Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene)

Hiroki Takao, Yukio Furukawa

    Research output: Contribution to journal › Article

    8 Citations (Scopus)

    Abstract

    Infrared absorption induced by field effect from a metal-insulator- semiconductor diode with an Au/aluminum oxide/ regioregular poly(3- hexylthiophene) structure has been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The observed bands have been attributed to carriers (positive polarons) injected into the polymer layer and accumulated near the surface of the layer.

    Original languageEnglish
    Pages (from-to)1168-1169
    Number of pages2
    JournalChemistry Letters
    Volume32
    Issue number12
    Publication statusPublished - 2003 Dec 5

    Fingerprint

    Semiconductor diodes
    Polarons
    Aluminum Oxide
    Infrared absorption
    Absorption spectroscopy
    Polymers
    Metals
    Infrared radiation
    poly(3-hexylthiophene)

    ASJC Scopus subject areas

    • Chemistry(all)

    Cite this

    Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene). / Takao, Hiroki; Furukawa, Yukio.

    In: Chemistry Letters, Vol. 32, No. 12, 05.12.2003, p. 1168-1169.

    Research output: Contribution to journal › Article

    Takao, H & Furukawa, Y 2003, 'Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene)', Chemistry Letters, vol. 32, no. 12, pp. 1168-1169.
    Takao H, Furukawa Y. Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene). Chemistry Letters. 2003 Dec 5;32(12):1168-1169.
    Takao, Hiroki ; Furukawa, Yukio. / Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene). In: Chemistry Letters. 2003 ; Vol. 32, No. 12. pp. 1168-1169.
    @article{95866a7aa94d4651b4caefc3d1e5c41e,
    title = "Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene)",
    abstract = "Infrared absorption induced by field effect from a metal-insulator- semiconductor diode with an Au/aluminum oxide/ regioregular poly(3- hexylthiophene) structure has been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The observed bands have been attributed to carriers (positive polarons) injected into the polymer layer and accumulated near the surface of the layer.",
    author = "Hiroki Takao and Yukio Furukawa",
    year = "2003",
    month = "12",
    day = "5",
    language = "English",
    volume = "32",
    pages = "1168--1169",
    journal = "Chemistry Letters",
    issn = "0366-7022",
    publisher = "Chemical Society of Japan",
    number = "12",

    }

    TY - JOUR

    T1 - Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene)

    AU - Takao, Hiroki

    AU - Furukawa, Yukio

    PY - 2003/12/5

    Y1 - 2003/12/5

    N2 - Infrared absorption induced by field effect from a metal-insulator- semiconductor diode with an Au/aluminum oxide/ regioregular poly(3- hexylthiophene) structure has been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The observed bands have been attributed to carriers (positive polarons) injected into the polymer layer and accumulated near the surface of the layer.

    AB - Infrared absorption induced by field effect from a metal-insulator- semiconductor diode with an Au/aluminum oxide/ regioregular poly(3- hexylthiophene) structure has been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The observed bands have been attributed to carriers (positive polarons) injected into the polymer layer and accumulated near the surface of the layer.

    UR - http://www.scopus.com/inward/record.url?scp=1442264303&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=1442264303&partnerID=8YFLogxK

    M3 - Article

    AN - SCOPUS:1442264303

    VL - 32

    SP - 1168

    EP - 1169

    JO - Chemistry Letters

    JF - Chemistry Letters

    SN - 0366-7022

    IS - 12

    ER -

    Access to Document