Abstract
Infrared absorption induced by field effect from a metal-insulator- semiconductor diode with an Au/aluminum oxide/ regioregular poly(3- hexylthiophene) structure has been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The observed bands have been attributed to carriers (positive polarons) injected into the polymer layer and accumulated near the surface of the layer.
Original language | English |
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Pages (from-to) | 1168-1169 |
Number of pages | 2 |
Journal | Chemistry Letters |
Volume | 32 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2003 Dec 5 |
ASJC Scopus subject areas
- Chemistry(all)