Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene)

Hiroki Takao; Yukio Furukawa

doi:10.1246/cl.2003.1168

Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene)

Hiroki Takao, Yukio Furukawa^*

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Infrared absorption induced by field effect from a metal-insulator- semiconductor diode with an Au/aluminum oxide/ regioregular poly(3- hexylthiophene) structure has been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The observed bands have been attributed to carriers (positive polarons) injected into the polymer layer and accumulated near the surface of the layer.

Original language	English
Pages (from-to)	1168-1169
Number of pages	2
Journal	Chemistry Letters
Volume	32
Issue number	12
DOIs	https://doi.org/10.1246/cl.2003.1168
Publication status	Published - 2003 Dec 5

ASJC Scopus subject areas

Chemistry(all)

Access to Document

10.1246/cl.2003.1168

Cite this

@article{95866a7aa94d4651b4caefc3d1e5c41e,

title = "Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene)",

abstract = "Infrared absorption induced by field effect from a metal-insulator- semiconductor diode with an Au/aluminum oxide/ regioregular poly(3- hexylthiophene) structure has been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The observed bands have been attributed to carriers (positive polarons) injected into the polymer layer and accumulated near the surface of the layer.",

author = "Hiroki Takao and Yukio Furukawa",

year = "2003",

month = dec,

day = "5",

doi = "10.1246/cl.2003.1168",

language = "English",

volume = "32",

pages = "1168--1169",

journal = "Chemistry Letters",

issn = "0366-7022",

publisher = "Chemical Society of Japan",

number = "12",

}

TY - JOUR

T1 - Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene)

AU - Takao, Hiroki

AU - Furukawa, Yukio

PY - 2003/12/5

Y1 - 2003/12/5

N2 - Infrared absorption induced by field effect from a metal-insulator- semiconductor diode with an Au/aluminum oxide/ regioregular poly(3- hexylthiophene) structure has been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The observed bands have been attributed to carriers (positive polarons) injected into the polymer layer and accumulated near the surface of the layer.

AB - Infrared absorption induced by field effect from a metal-insulator- semiconductor diode with an Au/aluminum oxide/ regioregular poly(3- hexylthiophene) structure has been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The observed bands have been attributed to carriers (positive polarons) injected into the polymer layer and accumulated near the surface of the layer.

UR - http://www.scopus.com/inward/record.url?scp=1442264303&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1442264303&partnerID=8YFLogxK

U2 - 10.1246/cl.2003.1168

DO - 10.1246/cl.2003.1168

M3 - Article

AN - SCOPUS:1442264303

VL - 32

SP - 1168

EP - 1169

JO - Chemistry Letters

JF - Chemistry Letters

SN - 0366-7022

IS - 12

ER -

Infrared Absorption Induced by Field Effect from a Metal-Insulator- Semiconductor Diode Fabricated with Regioregular Poly(3-hexylthiophene)

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this