(In,Ga)As gated-vertical quantum dot with an Al2O3 insulator

Tomohiro Kita, D. Chiba, Y. Ohno, H. Ohno

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The authors fabricated a gated-vertical (In,Ga)As quantum dot with an Al2 O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dIdV-V characteristics shows clear Coulomb diamonds at 1.1 K. The metal-insulator gate structure allowed the authors to control the number of electrons in the quantum dot from 0 to a large number estimated to be about 130.

Original languageEnglish
Article number062102
JournalApplied Physics Letters
Volume90
Issue number6
DOIs
Publication statusPublished - 2007 Feb 19
Externally publishedYes

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quantum dots
insulators
atomic layer epitaxy
transport properties
diamonds
electric potential
metals
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

(In,Ga)As gated-vertical quantum dot with an Al2O3 insulator. / Kita, Tomohiro; Chiba, D.; Ohno, Y.; Ohno, H.

In: Applied Physics Letters, Vol. 90, No. 6, 062102, 19.02.2007.

Research output: Contribution to journalArticle

Kita, Tomohiro ; Chiba, D. ; Ohno, Y. ; Ohno, H. / (In,Ga)As gated-vertical quantum dot with an Al2O3 insulator. In: Applied Physics Letters. 2007 ; Vol. 90, No. 6.
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