InGaAs/InAlAs in-plane superlattices grown on slightly misoriented (110) InP substrates by molecular beam epitaxy

Yoshiaki Nakata, Osamu Ueda, Atsushi Tackeuchi, Satoshi Nakamura, Shunichi Muto

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Abstract

InGaAs/InAlAs in-plane superlattices (IPSLs) composed of InAs/GaAs and InAs/AlAs monolayer superlattices were grown using molecular beam epitaxy. The substrates were misoriented (110) InP tilting 3° toward the [001̄] direction. We grew half monolayers of AlAs and GaAs and single monolayers of InAs alternately, keeping regular arrays of single monolayer steps. The structures were evaluated by transmission electron microscopy (TEM). In a transmission electron diffraction pattern from the (1̄10) cross-section, we observed two types of superstructure spot pairs double-positioned in the [001] direction, indicating the formation of the intended IPSL structures. In a cross-sectional TEM dark-field image, we observed the InGaAs/InAlAs superlattice structures formed almost in the [001] direction. The mean period of the superlattices was approximately 4 nm, which was comparable to the terrace width expected from the substrate tilt angle. However, IPSL structures were not completely formed, i.e., the lateral interfaces meandered along the growth direction, and partial disorderings were often observed. The photoluminescence spectrum from the IPSL had a peak corresponding to the InGaAs (2 nm thick)/InAlAs (2 nm thick) superlattice in addition to a peak corresponding to the In0.5Al0.25As alloy.

Original languageEnglish
Pages (from-to)341-345
Number of pages5
JournalJournal of Crystal Growth
Volume150
Issue number1 -4 pt 1
DOIs
Publication statusPublished - 1995 May 1
Externally publishedYes

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Superlattices
Molecular beam epitaxy
superlattices
molecular beam epitaxy
Monolayers
Substrates
Transmission electron microscopy
transmission electron microscopy
Electron diffraction
Diffraction patterns
Photoluminescence
diffraction patterns
electron diffraction
photoluminescence
Direction compound
cross sections
indium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

InGaAs/InAlAs in-plane superlattices grown on slightly misoriented (110) InP substrates by molecular beam epitaxy. / Nakata, Yoshiaki; Ueda, Osamu; Tackeuchi, Atsushi; Nakamura, Satoshi; Muto, Shunichi.

In: Journal of Crystal Growth, Vol. 150, No. 1 -4 pt 1, 01.05.1995, p. 341-345.

Research output: Contribution to journalArticle

Nakata, Yoshiaki ; Ueda, Osamu ; Tackeuchi, Atsushi ; Nakamura, Satoshi ; Muto, Shunichi. / InGaAs/InAlAs in-plane superlattices grown on slightly misoriented (110) InP substrates by molecular beam epitaxy. In: Journal of Crystal Growth. 1995 ; Vol. 150, No. 1 -4 pt 1. pp. 341-345.
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