InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD

Masahiro Aoki, Makoto Suzuki, Hirohisa Sano, Toshihiro Kawano, Tatemi Ido, Tsuyoshi Taniwatari, Kazuhisa Uomi, Atsushi Takai

Research output: Contribution to journalArticle

161 Citations (Scopus)

Abstract

Fabrication and basic characteristics of a new structure InGaAs/InGaAsP (MQW) electroabsorption modulator integrated with a distributed feedback (DFB) laser are presented. First, a fundamental study was performed on the applicability of the InGaAs/InGaAsP MQW structure to an electroabsorption-type modulator. We have experimentally demonstrated both the efficient attenuation, the small hole pileup and small chirp characteristics of a discrete modulator based on this MQW structure. We also made a study of the controllability of in-plane band-gap energy by the use of selective area metal-organic chemical vapor deposition aimed at one-step growth integration of modulators and lasers. We demonstrated a sufficient range for controllable quantum energy level and high quality of the selectively grown MQW layers. By using this technique, the modulator was monolithically integrated with a same-material MQW DFB laser. Using a low-capacitance semi-insulating buried-hetero structure, we achieved over 14-GHz modulation under high-light-output operations up to +10 dBm. Modulation at 10 Gb/s with a modulation voltage swing of only 1 Vpp demonstrates the potential value of this InGaAs/InGaAsP MQW system for laser-integrated electroabsorption modulators for 1.55 µm lightwave communications.

Original languageEnglish
Pages (from-to)2088-2096
Number of pages9
JournalIEEE Journal of Quantum Electronics
Volume29
Issue number6
DOIs
Publication statusPublished - 1993
Externally publishedYes

Fingerprint

Electroabsorption modulators
Distributed feedback lasers
Metallorganic chemical vapor deposition
distributed feedback lasers
Power control
Modulators
metalorganic chemical vapor deposition
modulators
Energy gap
Modulation
modulation
Lasers
Organic chemicals
Controllability
Electron energy levels
Chemical vapor deposition
Capacitance
controllability
chirp
Fabrication

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD. / Aoki, Masahiro; Suzuki, Makoto; Sano, Hirohisa; Kawano, Toshihiro; Ido, Tatemi; Taniwatari, Tsuyoshi; Uomi, Kazuhisa; Takai, Atsushi.

In: IEEE Journal of Quantum Electronics, Vol. 29, No. 6, 1993, p. 2088-2096.

Research output: Contribution to journalArticle

Aoki, Masahiro ; Suzuki, Makoto ; Sano, Hirohisa ; Kawano, Toshihiro ; Ido, Tatemi ; Taniwatari, Tsuyoshi ; Uomi, Kazuhisa ; Takai, Atsushi. / InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD. In: IEEE Journal of Quantum Electronics. 1993 ; Vol. 29, No. 6. pp. 2088-2096.
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