InGaAsP electroabsorption modulator for high-bit-rate EDFA system

Masatoshi Suzuki; Hideaki Tanaka; Yuichi Matsushima

doi:10.1109/68.141976

InGaAsP electroabsorption modulator for high-bit-rate EDFA system

Masatoshi Suzuki^*, Hideaki Tanaka, Yuichi Matsushima

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.

Original language	English
Pages (from-to)	586-588
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	4
Issue number	6
DOIs	https://doi.org/10.1109/68.141976
Publication status	Published - 1992 Jun
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering
Physics and Astronomy (miscellaneous)
Atomic and Molecular Physics, and Optics

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10.1109/68.141976

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abstract = "The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.",

author = "Masatoshi Suzuki and Hideaki Tanaka and Yuichi Matsushima",

year = "1992",

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doi = "10.1109/68.141976",

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journal = "IEEE Photonics Technology Letters",

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AU - Suzuki, Masatoshi

AU - Tanaka, Hideaki

AU - Matsushima, Yuichi

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N2 - The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.

AB - The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.

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ER -

InGaAsP electroabsorption modulator for high-bit-rate EDFA system

Abstract

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