InGaAsP electroabsorption modulator for high-bit-rate EDFA system

Masatoshi Suzuki; Hideaki Tanaka; Yuichi Matsushima

doi:10.1109/68.141976

InGaAsP electroabsorption modulator for high-bit-rate EDFA system

Masatoshi Suzuki, Hideaki Tanaka, Yuichi Matsushima

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.

Original language	English
Pages (from-to)	586-588
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	4
Issue number	6
DOIs	https://doi.org/10.1109/68.141976
Publication status	Published - 1992 Jun
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering
Physics and Astronomy (miscellaneous)
Atomic and Molecular Physics, and Optics

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author = "Masatoshi Suzuki and Hideaki Tanaka and Yuichi Matsushima",

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