InGaAsP electroabsorption modulator for high-bit-rate EDFA system

Masatoshi Suzuki, Hideaki Tanaka, Yuichi Matsushima

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.

Original languageEnglish
Pages (from-to)586-588
Number of pages3
JournalIEEE Photonics Technology Letters
Volume4
Issue number6
DOIs
Publication statusPublished - 1992 Jun
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics

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