InGaAsP electroabsorption modulator for high-bit-rate EDFA system

Masatoshi Suzuki, Hideaki Tanaka, Yuichi Matsushima

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.

Original languageEnglish
Pages (from-to)586-588
Number of pages3
JournalIEEE Photonics Technology Letters
Volume4
Issue number6
DOIs
Publication statusPublished - 1992 Jun
Externally publishedYes

Fingerprint

Electroabsorption modulators
Erbium doped fiber amplifiers
modulators
Fiber amplifiers
fibers
Fibers
Insertion losses
Modulators
Modulation
Polarization
insertion loss
Wavelength
low voltage
Electric potential
amplifiers
modulation
Experiments
polarization
wavelengths

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics

Cite this

InGaAsP electroabsorption modulator for high-bit-rate EDFA system. / Suzuki, Masatoshi; Tanaka, Hideaki; Matsushima, Yuichi.

In: IEEE Photonics Technology Letters, Vol. 4, No. 6, 06.1992, p. 586-588.

Research output: Contribution to journalArticle

Suzuki, Masatoshi ; Tanaka, Hideaki ; Matsushima, Yuichi. / InGaAsP electroabsorption modulator for high-bit-rate EDFA system. In: IEEE Photonics Technology Letters. 1992 ; Vol. 4, No. 6. pp. 586-588.
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