InGaAsP electroabsorption modulator for high-bit-rate EDFA system

Masatoshi Suzuki*, Hideaki Tanaka, Yuichi Matsushima

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)


The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.

Original languageEnglish
Pages (from-to)586-588
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number6
Publication statusPublished - 1992 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics


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