Abstract
The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.
| Original language | English |
|---|---|
| Pages (from-to) | 586-588 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 4 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1992 Jun |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
- Atomic and Molecular Physics, and Optics
Cite this
InGaAsP electroabsorption modulator for high-bit-rate EDFA system. / Suzuki, Masatoshi; Tanaka, Hideaki; Matsushima, Yuichi.
In: IEEE Photonics Technology Letters, Vol. 4, No. 6, 06.1992, p. 586-588.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - InGaAsP electroabsorption modulator for high-bit-rate EDFA system
AU - Suzuki, Masatoshi
AU - Tanaka, Hideaki
AU - Matsushima, Yuichi
PY - 1992/6
Y1 - 1992/6
N2 - The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.
AB - The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.
UR - http://www.scopus.com/inward/record.url?scp=0026881074&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026881074&partnerID=8YFLogxK
U2 - 10.1109/68.141976
DO - 10.1109/68.141976
M3 - Article
VL - 4
SP - 586
EP - 588
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 6
ER -