InGaAsP electroabsorption modulator for high-bit-rate EDFA system

Masatoshi Suzuki; Hideaki Tanaka; Yuichi Matsushima

doi:10.1109/68.141976

InGaAsP electroabsorption modulator for high-bit-rate EDFA system

Masatoshi Suzuki, Hideaki Tanaka, Yuichi Matsushima

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.

Original language	English
Pages (from-to)	586-588
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	4
Issue number	6
DOIs	https://doi.org/10.1109/68.141976
Publication status	Published - 1992 Jun
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering
Physics and Astronomy (miscellaneous)
Atomic and Molecular Physics, and Optics

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@article{c611e35702d048478492d1c2514f990a,

title = "InGaAsP electroabsorption modulator for high-bit-rate EDFA system",

abstract = "The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.",

author = "Masatoshi Suzuki and Hideaki Tanaka and Yuichi Matsushima",

year = "1992",

month = jun,

doi = "10.1109/68.141976",

language = "English",

volume = "4",

pages = "586--588",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - InGaAsP electroabsorption modulator for high-bit-rate EDFA system

AU - Suzuki, Masatoshi

AU - Tanaka, Hideaki

AU - Matsushima, Yuichi

PY - 1992/6

Y1 - 1992/6

N2 - The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.

AB - The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.

UR - http://www.scopus.com/inward/record.url?scp=0026881074&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026881074&partnerID=8YFLogxK

U2 - 10.1109/68.141976

DO - 10.1109/68.141976

M3 - Article

AN - SCOPUS:0026881074

VL - 4

SP - 586

EP - 588

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 6

ER -

InGaAsP electroabsorption modulator for high-bit-rate EDFA system

Abstract

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