Abstract
The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.
| Original language | English |
|---|---|
| Pages (from-to) | 586-588 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 4 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1992 Jun |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
- Atomic and Molecular Physics, and Optics
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Suzuki, M., Tanaka, H., & Matsushima, Y. (1992). InGaAsP electroabsorption modulator for high-bit-rate EDFA system. IEEE Photonics Technology Letters, 4(6), 586-588. https://doi.org/10.1109/68.141976