InGaAsP/InP buried heterostruture on SiO2/Si substrate using epitaxial growth after direct bonding of thin active layer

Takuro Fujii, Tomonari Sato, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have successfully demonstrated epitaxial growth of an InP layer to fabricate an InGaAsP/InP buried heterostructure (BH) on Si substrate, in which a thin InGaAsP-based active layer is directly bonded to SiO2/Si substrate before fabricating the BH. An O2 plasma-assisted wafer bonding is used to combine a 2-inch Si substrate with 1-μm thick thermal oxide and a 2-inch InP substrate with the active layer. We confirm that the crystal quality is not significantly degraded compared with that on InP substrate. These results indicate that the proposed fabrication method is suitable for integrating III-V materials on Si substrate.

Original languageEnglish
Title of host publication26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479957293
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes
Event26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 - Montpellier, France
Duration: 2014 May 112014 May 15

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
CountryFrance
CityMontpellier
Period14/5/1114/5/15

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Fujii, T., Sato, T., Takeda, K., Hasebe, K., Kakitsuka, T., & Matsuo, S. (2014). InGaAsP/InP buried heterostruture on SiO2/Si substrate using epitaxial growth after direct bonding of thin active layer. In 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 [6880515] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2014.6880515