InGaAsP/InP buried heterostruture on SiO2/Si substrate using epitaxial growth after direct bonding of thin active layer

Takuro Fujii, Tomonari Sato, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have successfully demonstrated epitaxial growth of an InP layer to fabricate an InGaAsP/InP buried heterostructure (BH) on Si substrate, in which a thin InGaAsP-based active layer is directly bonded to SiO2/Si substrate before fabricating the BH. An O2 plasma-assisted wafer bonding is used to combine a 2-inch Si substrate with 1-μm thick thermal oxide and a 2-inch InP substrate with the active layer. We confirm that the crystal quality is not significantly degraded compared with that on InP substrate. These results indicate that the proposed fabrication method is suitable for integrating III-V materials on Si substrate.

Original languageEnglish
Title of host publication26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479957293
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes
Event26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 - Montpellier, France
Duration: 2014 May 112014 May 15

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
CountryFrance
CityMontpellier
Period14/5/1114/5/15

Fingerprint

Epitaxial growth
Substrates
Heterojunctions
Wafer bonding
Oxides
Plasmas
Fabrication
Crystals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Fujii, T., Sato, T., Takeda, K., Hasebe, K., Kakitsuka, T., & Matsuo, S. (2014). InGaAsP/InP buried heterostruture on SiO2/Si substrate using epitaxial growth after direct bonding of thin active layer. In 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 [6880515] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2014.6880515

InGaAsP/InP buried heterostruture on SiO2/Si substrate using epitaxial growth after direct bonding of thin active layer. / Fujii, Takuro; Sato, Tomonari; Takeda, Koji; Hasebe, Koichi; Kakitsuka, Takaaki; Matsuo, Shinji.

26th International Conference on Indium Phosphide and Related Materials, IPRM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 6880515 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fujii, T, Sato, T, Takeda, K, Hasebe, K, Kakitsuka, T & Matsuo, S 2014, InGaAsP/InP buried heterostruture on SiO2/Si substrate using epitaxial growth after direct bonding of thin active layer. in 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014., 6880515, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Institute of Electrical and Electronics Engineers Inc., 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Montpellier, France, 14/5/11. https://doi.org/10.1109/ICIPRM.2014.6880515
Fujii T, Sato T, Takeda K, Hasebe K, Kakitsuka T, Matsuo S. InGaAsP/InP buried heterostruture on SiO2/Si substrate using epitaxial growth after direct bonding of thin active layer. In 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 6880515. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2014.6880515
Fujii, Takuro ; Sato, Tomonari ; Takeda, Koji ; Hasebe, Koichi ; Kakitsuka, Takaaki ; Matsuo, Shinji. / InGaAsP/InP buried heterostruture on SiO2/Si substrate using epitaxial growth after direct bonding of thin active layer. 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).
@inproceedings{f2016a0de5f041feb1b373c48bd787e6,
title = "InGaAsP/InP buried heterostruture on SiO2/Si substrate using epitaxial growth after direct bonding of thin active layer",
abstract = "We have successfully demonstrated epitaxial growth of an InP layer to fabricate an InGaAsP/InP buried heterostructure (BH) on Si substrate, in which a thin InGaAsP-based active layer is directly bonded to SiO2/Si substrate before fabricating the BH. An O2 plasma-assisted wafer bonding is used to combine a 2-inch Si substrate with 1-μm thick thermal oxide and a 2-inch InP substrate with the active layer. We confirm that the crystal quality is not significantly degraded compared with that on InP substrate. These results indicate that the proposed fabrication method is suitable for integrating III-V materials on Si substrate.",
author = "Takuro Fujii and Tomonari Sato and Koji Takeda and Koichi Hasebe and Takaaki Kakitsuka and Shinji Matsuo",
year = "2014",
month = "1",
day = "1",
doi = "10.1109/ICIPRM.2014.6880515",
language = "English",
isbn = "9781479957293",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "26th International Conference on Indium Phosphide and Related Materials, IPRM 2014",

}

TY - GEN

T1 - InGaAsP/InP buried heterostruture on SiO2/Si substrate using epitaxial growth after direct bonding of thin active layer

AU - Fujii, Takuro

AU - Sato, Tomonari

AU - Takeda, Koji

AU - Hasebe, Koichi

AU - Kakitsuka, Takaaki

AU - Matsuo, Shinji

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We have successfully demonstrated epitaxial growth of an InP layer to fabricate an InGaAsP/InP buried heterostructure (BH) on Si substrate, in which a thin InGaAsP-based active layer is directly bonded to SiO2/Si substrate before fabricating the BH. An O2 plasma-assisted wafer bonding is used to combine a 2-inch Si substrate with 1-μm thick thermal oxide and a 2-inch InP substrate with the active layer. We confirm that the crystal quality is not significantly degraded compared with that on InP substrate. These results indicate that the proposed fabrication method is suitable for integrating III-V materials on Si substrate.

AB - We have successfully demonstrated epitaxial growth of an InP layer to fabricate an InGaAsP/InP buried heterostructure (BH) on Si substrate, in which a thin InGaAsP-based active layer is directly bonded to SiO2/Si substrate before fabricating the BH. An O2 plasma-assisted wafer bonding is used to combine a 2-inch Si substrate with 1-μm thick thermal oxide and a 2-inch InP substrate with the active layer. We confirm that the crystal quality is not significantly degraded compared with that on InP substrate. These results indicate that the proposed fabrication method is suitable for integrating III-V materials on Si substrate.

UR - http://www.scopus.com/inward/record.url?scp=84906748464&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906748464&partnerID=8YFLogxK

U2 - 10.1109/ICIPRM.2014.6880515

DO - 10.1109/ICIPRM.2014.6880515

M3 - Conference contribution

SN - 9781479957293

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

BT - 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014

PB - Institute of Electrical and Electronics Engineers Inc.

ER -