InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers

Tetsuya Akasaka; Hideki Gotoh; Yasuyuki Kobayashi; Hidetoshi Nakano; Toshiki Makimoto

doi:10.1063/1.2347115

InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers

Tetsuya Akasaka^*, Hideki Gotoh, Yasuyuki Kobayashi, Hidetoshi Nakano, Toshiki Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

A series of InGaN quantum wells (QWs) emitting blue-green, blue, violet, or ultraviolet light was grown on InGaN underlying layers (ULs). The potential fluctuation in these InGaN QWs was carefully measured using time-resolved photoluminescence, taking several steps to reduce the quantum confinement Stark effect. The potential fluctuation of InGaN QWs on InGaN ULs was smaller than that on conventional GaN ULs with the identical emission wavelength. A violet-light-emitting diode using an InGaN UL had the electroluminescence intensity approximately five times higher than the one using a conventional GaN UL under the low injection-current conditions, indicating that an InGaN UL effectively eliminates the nonradiative recombination centers in the InGaN QWs.

Original language	English
Article number	101110
Journal	Applied Physics Letters
Volume	89
Issue number	10
DOIs	https://doi.org/10.1063/1.2347115
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2347115

Cite this

@article{87c8cfdb8d1f4cee952cb24e0b082475,

title = "InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers",

abstract = "A series of InGaN quantum wells (QWs) emitting blue-green, blue, violet, or ultraviolet light was grown on InGaN underlying layers (ULs). The potential fluctuation in these InGaN QWs was carefully measured using time-resolved photoluminescence, taking several steps to reduce the quantum confinement Stark effect. The potential fluctuation of InGaN QWs on InGaN ULs was smaller than that on conventional GaN ULs with the identical emission wavelength. A violet-light-emitting diode using an InGaN UL had the electroluminescence intensity approximately five times higher than the one using a conventional GaN UL under the low injection-current conditions, indicating that an InGaN UL effectively eliminates the nonradiative recombination centers in the InGaN QWs.",

author = "Tetsuya Akasaka and Hideki Gotoh and Yasuyuki Kobayashi and Hidetoshi Nakano and Toshiki Makimoto",

year = "2006",

doi = "10.1063/1.2347115",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers

AU - Akasaka, Tetsuya

AU - Gotoh, Hideki

AU - Kobayashi, Yasuyuki

AU - Nakano, Hidetoshi

AU - Makimoto, Toshiki

PY - 2006

Y1 - 2006

N2 - A series of InGaN quantum wells (QWs) emitting blue-green, blue, violet, or ultraviolet light was grown on InGaN underlying layers (ULs). The potential fluctuation in these InGaN QWs was carefully measured using time-resolved photoluminescence, taking several steps to reduce the quantum confinement Stark effect. The potential fluctuation of InGaN QWs on InGaN ULs was smaller than that on conventional GaN ULs with the identical emission wavelength. A violet-light-emitting diode using an InGaN UL had the electroluminescence intensity approximately five times higher than the one using a conventional GaN UL under the low injection-current conditions, indicating that an InGaN UL effectively eliminates the nonradiative recombination centers in the InGaN QWs.

AB - A series of InGaN quantum wells (QWs) emitting blue-green, blue, violet, or ultraviolet light was grown on InGaN underlying layers (ULs). The potential fluctuation in these InGaN QWs was carefully measured using time-resolved photoluminescence, taking several steps to reduce the quantum confinement Stark effect. The potential fluctuation of InGaN QWs on InGaN ULs was smaller than that on conventional GaN ULs with the identical emission wavelength. A violet-light-emitting diode using an InGaN UL had the electroluminescence intensity approximately five times higher than the one using a conventional GaN UL under the low injection-current conditions, indicating that an InGaN UL effectively eliminates the nonradiative recombination centers in the InGaN QWs.

UR - http://www.scopus.com/inward/record.url?scp=33748483513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748483513&partnerID=8YFLogxK

U2 - 10.1063/1.2347115

DO - 10.1063/1.2347115

M3 - Article

AN - SCOPUS:33748483513

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 101110

ER -

InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this