InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers

Tetsuya Akasaka, Hideki Gotoh, Yasuyuki Kobayashi, Hidetoshi Nakano, Toshiki Makimoto

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

A series of InGaN quantum wells (QWs) emitting blue-green, blue, violet, or ultraviolet light was grown on InGaN underlying layers (ULs). The potential fluctuation in these InGaN QWs was carefully measured using time-resolved photoluminescence, taking several steps to reduce the quantum confinement Stark effect. The potential fluctuation of InGaN QWs on InGaN ULs was smaller than that on conventional GaN ULs with the identical emission wavelength. A violet-light-emitting diode using an InGaN UL had the electroluminescence intensity approximately five times higher than the one using a conventional GaN UL under the low injection-current conditions, indicating that an InGaN UL effectively eliminates the nonradiative recombination centers in the InGaN QWs.

Original languageEnglish
Article number101110
JournalApplied Physics Letters
Volume89
Issue number10
DOIs
Publication statusPublished - 2006
Externally publishedYes

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quantum wells
Stark effect
ultraviolet radiation
electroluminescence
light emitting diodes
injection
photoluminescence
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers. / Akasaka, Tetsuya; Gotoh, Hideki; Kobayashi, Yasuyuki; Nakano, Hidetoshi; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 89, No. 10, 101110, 2006.

Research output: Contribution to journalArticle

Akasaka, Tetsuya ; Gotoh, Hideki ; Kobayashi, Yasuyuki ; Nakano, Hidetoshi ; Makimoto, Toshiki. / InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers. In: Applied Physics Letters. 2006 ; Vol. 89, No. 10.
@article{87c8cfdb8d1f4cee952cb24e0b082475,
title = "InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers",
abstract = "A series of InGaN quantum wells (QWs) emitting blue-green, blue, violet, or ultraviolet light was grown on InGaN underlying layers (ULs). The potential fluctuation in these InGaN QWs was carefully measured using time-resolved photoluminescence, taking several steps to reduce the quantum confinement Stark effect. The potential fluctuation of InGaN QWs on InGaN ULs was smaller than that on conventional GaN ULs with the identical emission wavelength. A violet-light-emitting diode using an InGaN UL had the electroluminescence intensity approximately five times higher than the one using a conventional GaN UL under the low injection-current conditions, indicating that an InGaN UL effectively eliminates the nonradiative recombination centers in the InGaN QWs.",
author = "Tetsuya Akasaka and Hideki Gotoh and Yasuyuki Kobayashi and Hidetoshi Nakano and Toshiki Makimoto",
year = "2006",
doi = "10.1063/1.2347115",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers

AU - Akasaka, Tetsuya

AU - Gotoh, Hideki

AU - Kobayashi, Yasuyuki

AU - Nakano, Hidetoshi

AU - Makimoto, Toshiki

PY - 2006

Y1 - 2006

N2 - A series of InGaN quantum wells (QWs) emitting blue-green, blue, violet, or ultraviolet light was grown on InGaN underlying layers (ULs). The potential fluctuation in these InGaN QWs was carefully measured using time-resolved photoluminescence, taking several steps to reduce the quantum confinement Stark effect. The potential fluctuation of InGaN QWs on InGaN ULs was smaller than that on conventional GaN ULs with the identical emission wavelength. A violet-light-emitting diode using an InGaN UL had the electroluminescence intensity approximately five times higher than the one using a conventional GaN UL under the low injection-current conditions, indicating that an InGaN UL effectively eliminates the nonradiative recombination centers in the InGaN QWs.

AB - A series of InGaN quantum wells (QWs) emitting blue-green, blue, violet, or ultraviolet light was grown on InGaN underlying layers (ULs). The potential fluctuation in these InGaN QWs was carefully measured using time-resolved photoluminescence, taking several steps to reduce the quantum confinement Stark effect. The potential fluctuation of InGaN QWs on InGaN ULs was smaller than that on conventional GaN ULs with the identical emission wavelength. A violet-light-emitting diode using an InGaN UL had the electroluminescence intensity approximately five times higher than the one using a conventional GaN UL under the low injection-current conditions, indicating that an InGaN UL effectively eliminates the nonradiative recombination centers in the InGaN QWs.

UR - http://www.scopus.com/inward/record.url?scp=33748483513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748483513&partnerID=8YFLogxK

U2 - 10.1063/1.2347115

DO - 10.1063/1.2347115

M3 - Article

AN - SCOPUS:33748483513

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 101110

ER -