Initial atomic structure of CaF2/Si(111) interface formation

K. Miura, R. Souda, T. Aizawa, C. Oshima, Y. Ishizawa

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    Ion scattering spectroscopy (ISS) and electron energy loss spectroscopy (EELS) have revealed that the initial stage of an interface formation is an adsorption state. The adsorption state shows a gradual transition to the interface state as a film form with increasing CaF2 deposition. The EELS spectrum of the adsorption state is quite different from that of a CaF2(111) surface and shows no change by an irradiation of a low energy electron beam.

    Original languageEnglish
    Pages (from-to)605-608
    Number of pages4
    JournalSolid State Communications
    Volume72
    Issue number6
    DOIs
    Publication statusPublished - 1989

    Fingerprint

    atomic structure
    Electron energy loss spectroscopy
    Adsorption
    adsorption
    energy dissipation
    electron energy
    spectroscopy
    Interface states
    ion scattering
    Electron transitions
    Electron beams
    Irradiation
    Spectroscopy
    Scattering
    electron beams
    Ions
    irradiation
    energy

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics

    Cite this

    Miura, K., Souda, R., Aizawa, T., Oshima, C., & Ishizawa, Y. (1989). Initial atomic structure of CaF2/Si(111) interface formation. Solid State Communications, 72(6), 605-608. https://doi.org/10.1016/0038-1098(89)91042-9

    Initial atomic structure of CaF2/Si(111) interface formation. / Miura, K.; Souda, R.; Aizawa, T.; Oshima, C.; Ishizawa, Y.

    In: Solid State Communications, Vol. 72, No. 6, 1989, p. 605-608.

    Research output: Contribution to journalArticle

    Miura, K, Souda, R, Aizawa, T, Oshima, C & Ishizawa, Y 1989, 'Initial atomic structure of CaF2/Si(111) interface formation', Solid State Communications, vol. 72, no. 6, pp. 605-608. https://doi.org/10.1016/0038-1098(89)91042-9
    Miura, K. ; Souda, R. ; Aizawa, T. ; Oshima, C. ; Ishizawa, Y. / Initial atomic structure of CaF2/Si(111) interface formation. In: Solid State Communications. 1989 ; Vol. 72, No. 6. pp. 605-608.
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