Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)

T. Q. Li, Suguru Noda, Y. Tsuji, Toshio Ohsawa, H. Komiyama

Research output: Contribution to journalArticle

70 Citations (Scopus)

Abstract

The initial growth and texture formation mechanism of TiN films were studied by using TEM and XRD. In the early stages of TiN deposition, randomly oriented nuclei were observed in a continuous TiN layer. TiN exhibited (111)-preferred orientation under relatively low N2 partial pressure and (200)-preferred orientation under relatively high N2 partial pressure.

Original languageEnglish
Pages (from-to)583-588
Number of pages6
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume20
Issue number3
DOIs
Publication statusPublished - 2002 May
Externally publishedYes

Fingerprint

Reactive sputtering
Partial pressure
Magnetron sputtering
partial pressure
magnetron sputtering
textures
Textures
Transmission electron microscopy
transmission electron microscopy
nuclei

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111). / Li, T. Q.; Noda, Suguru; Tsuji, Y.; Ohsawa, Toshio; Komiyama, H.

In: Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, Vol. 20, No. 3, 05.2002, p. 583-588.

Research output: Contribution to journalArticle

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