The initial growth and texture formation mechanism of TiN films were studied by using TEM and XRD. In the early stages of TiN deposition, randomly oriented nuclei were observed in a continuous TiN layer. TiN exhibited (111)-preferred orientation under relatively low N2 partial pressure and (200)-preferred orientation under relatively high N2 partial pressure.
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films|
|Publication status||Published - 2002 Jan 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films