Abstract
The initial growth and texture formation mechanism of TiN films were studied by using TEM and XRD. In the early stages of TiN deposition, randomly oriented nuclei were observed in a continuous TiN layer. TiN exhibited (111)-preferred orientation under relatively low N2 partial pressure and (200)-preferred orientation under relatively high N2 partial pressure.
Original language | English |
---|---|
Pages (from-to) | 583-588 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films |
Volume | 20 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2002 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films