Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)

T. Q. Li, S. Noda, Y. Tsuji, T. Ohsawa, H. Komiyama

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The initial growth and texture formation mechanism of TiN films were studied by using TEM and XRD. In the early stages of TiN deposition, randomly oriented nuclei were observed in a continuous TiN layer. TiN exhibited (111)-preferred orientation under relatively low N2 partial pressure and (200)-preferred orientation under relatively high N2 partial pressure.

Original languageEnglish
Pages (from-to)583-588
Number of pages6
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Issue number3
Publication statusPublished - 2002 Jan 1


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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