Initial growth of heteroepitaxial diamond on Ir (0 0 1)/MgO (0 0 1) substrates using antenna-edge-type microwave plasma assisted chemical vapor deposition

Toyokatsu Fujisaki, Minoru Tachiki, Norikazu Taniyama, Minoru Kudo, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    22 Citations (Scopus)

    Abstract

    Initial growth of heteroepitaxial diamond on Ir (0 0 1)/MgO (0 0 1) was investigated by scanning electron microscopy, reflection high-energy electron diffraction (RHEED) and atomic force microscopy. Bias-enhanced nucleation (BEN) was performed by antenna-edge-type microwave plasma assisted chemical vapor deposition. In BEN, diamond crystallites nucleated and grew along the [-1 1 0] and [1 1 0] directions of iridium. Diamond was likely to nucleate on protruded iridium areas. After BEN, in addition to the diamond diffraction spots, iridium bulk diffraction spots, which were not observed before BEN, were observed by RHEED. The iridium surface appeared to be protruded and changed by the high ion current density in BEN. Under [0 0 1] selective growth conditions, diamond crystallites, which were less than 10 nm in diameter, were etched by H2 plasma. Diamond nucleated areas corresponded to the surface ridges of iridium along the [-1 1 0] and [1 1 0] directions at 10-40 nm intervals before BEN.

    Original languageEnglish
    Pages (from-to)246-250
    Number of pages5
    JournalDiamond and Related Materials
    Volume12
    Issue number3-7
    DOIs
    Publication statusPublished - 2003 Mar

    Fingerprint

    Diamond
    Iridium
    Chemical vapor deposition
    iridium
    Diamonds
    Nucleation
    antennas
    diamonds
    Microwaves
    vapor deposition
    nucleation
    Antennas
    Plasmas
    microwaves
    Substrates
    Reflection high energy electron diffraction
    Crystallites
    high energy electrons
    crystallites
    electron diffraction

    Keywords

    • Chemical vapor deposition
    • Diamond
    • Heteroepitaxy
    • Iridium

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    Initial growth of heteroepitaxial diamond on Ir (0 0 1)/MgO (0 0 1) substrates using antenna-edge-type microwave plasma assisted chemical vapor deposition. / Fujisaki, Toyokatsu; Tachiki, Minoru; Taniyama, Norikazu; Kudo, Minoru; Kawarada, Hiroshi.

    In: Diamond and Related Materials, Vol. 12, No. 3-7, 03.2003, p. 246-250.

    Research output: Contribution to journalArticle

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