Negative substrate-bias effects on diamond heteroepitaxial nucleation have been investigated using microwave plasma-assisted chemical vapor deposition. The density and the percentage of azimuthally ordered particles grown on carburized Si(001) or on high-quality β-SiC(001) have been estimated by varying the bias-treatment conditions (reaction pressure, microwave power and bias voltage). The percentage of azimuthally ordered particles increases under the following conditions: pressure of 50 Torr, substrate temperature of approx.900°C and bias voltage of -50 V. Smooth heteroepitaxial diamond films of approx.4 μm thickness have been successfully synthesized on high-quality β-SiC(001) by the bias treatment under the above conditions followed by a two-step growth process: 〈001〉 mode, where [1̄10]- or -directed protrusions have been formed on β-SiC(001). Diamond islands grew along the grooves between the β-SiC protrusions in the initial stage.
|Title of host publication||Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers|
|Place of Publication||Minato-ku, Japan|
|Number of pages||7|
|Publication status||Published - 1995 Sep|
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