Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layer

Tsuyoshi Suesada, Naofumi Nakamura, Hiroyuki Nagasawa, Hiroshi Kawarada

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    49 Citations (Scopus)

    Abstract

    Negative substrate-bias effects on diamond heteroepitaxial nucleation have been investigated using microwave plasma-assisted chemical vapor deposition. The density and the percentage of azimuthally ordered particles grown on carburized Si(001) or on high-quality β-SiC(001) have been estimated by varying the bias-treatment conditions (reaction pressure, microwave power and bias voltage). The percentage of azimuthally ordered particles increases under the following conditions: pressure of 50 Torr, substrate temperature of approx.900°C and bias voltage of -50 V. Smooth heteroepitaxial diamond films of approx.4 μm thickness have been successfully synthesized on high-quality β-SiC(001) by the bias treatment under the above conditions followed by a two-step growth process: 〈001〉 mode, where [1̄10]- or [110]-directed protrusions have been formed on β-SiC(001). Diamond islands grew along the grooves between the β-SiC protrusions in the initial stage.

    Original languageEnglish
    Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
    Place of PublicationMinato-ku, Japan
    PublisherJJAP
    Pages4898-4904
    Number of pages7
    Volume34
    Edition9 A
    Publication statusPublished - 1995 Sep

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    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Suesada, T., Nakamura, N., Nagasawa, H., & Kawarada, H. (1995). Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layer. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (9 A ed., Vol. 34, pp. 4898-4904). JJAP.