Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layer

Tsuyoshi Suesada, Naofumi Nakamura, Hiroyuki Nagasawa, Hiroshi Kawarada

    Research output: Chapter in Book/Report/Conference proceedingChapter

    49 Citations (Scopus)

    Abstract

    Negative substrate-bias effects on diamond heteroepitaxial nucleation have been investigated using microwave plasma-assisted chemical vapor deposition. The density and the percentage of azimuthally ordered particles grown on carburized Si(001) or on high-quality β-SiC(001) have been estimated by varying the bias-treatment conditions (reaction pressure, microwave power and bias voltage). The percentage of azimuthally ordered particles increases under the following conditions: pressure of 50 Torr, substrate temperature of approx.900°C and bias voltage of -50 V. Smooth heteroepitaxial diamond films of approx.4 μm thickness have been successfully synthesized on high-quality β-SiC(001) by the bias treatment under the above conditions followed by a two-step growth process: 〈001〉 mode, where [1̄10]- or [110]-directed protrusions have been formed on β-SiC(001). Diamond islands grew along the grooves between the β-SiC protrusions in the initial stage.

    Original languageEnglish
    Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
    Place of PublicationMinato-ku, Japan
    PublisherJJAP
    Pages4898-4904
    Number of pages7
    Volume34
    Edition9 A
    Publication statusPublished - 1995 Sep

    Fingerprint

    Buffer layers
    Bias voltage
    Diamonds
    Microwaves
    Diamond films
    Substrates
    Chemical vapor deposition
    Nucleation
    Plasmas
    Temperature

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Suesada, T., Nakamura, N., Nagasawa, H., & Kawarada, H. (1995). Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layer. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (9 A ed., Vol. 34, pp. 4898-4904). Minato-ku, Japan: JJAP.

    Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layer. / Suesada, Tsuyoshi; Nakamura, Naofumi; Nagasawa, Hiroyuki; Kawarada, Hiroshi.

    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. Vol. 34 9 A. ed. Minato-ku, Japan : JJAP, 1995. p. 4898-4904.

    Research output: Chapter in Book/Report/Conference proceedingChapter

    Suesada, T, Nakamura, N, Nagasawa, H & Kawarada, H 1995, Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layer. in Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 9 A edn, vol. 34, JJAP, Minato-ku, Japan, pp. 4898-4904.
    Suesada T, Nakamura N, Nagasawa H, Kawarada H. Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layer. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 9 A ed. Vol. 34. Minato-ku, Japan: JJAP. 1995. p. 4898-4904
    Suesada, Tsuyoshi ; Nakamura, Naofumi ; Nagasawa, Hiroyuki ; Kawarada, Hiroshi. / Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layer. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. Vol. 34 9 A. ed. Minato-ku, Japan : JJAP, 1995. pp. 4898-4904
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