Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation

T. Q. Li, S. Noda, H. Komiyama, T. Yamamoto, Y. Ikuhara

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

The initial growth stage of titanium nitride (TiN) deposited by reactive magnetron sputtering onto (111)-oriented Si substrates was discussed. It was found that the growth of the crystal grains depended on the N2 partial pressure. The analysis showed that for films formed at N2 partial pressure equal to 0.47 Pa, an amorphous interlayer 1.5-1.8 nm thick formed between the TiN layer and Si substrate.

Original languageEnglish
Pages (from-to)1717-1723
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume21
Issue number5
DOIs
Publication statusPublished - 2003 Sep 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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