Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation

T. Q. Li; S. Noda; H. Komiyama; T. Yamamoto; Y. Ikuhara

doi:10.1116/1.1598975

Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation

T. Q. Li, S. Noda, H. Komiyama, T. Yamamoto, Y. Ikuhara

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

The initial growth stage of titanium nitride (TiN) deposited by reactive magnetron sputtering onto (111)-oriented Si substrates was discussed. It was found that the growth of the crystal grains depended on the N₂ partial pressure. The analysis showed that for films formed at N₂ partial pressure equal to 0.47 Pa, an amorphous interlayer 1.5-1.8 nm thick formed between the TiN layer and Si substrate.

Original language	English
Pages (from-to)	1717-1723
Number of pages	7
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	5
DOIs	https://doi.org/10.1116/1.1598975
Publication status	Published - 2003 Sep
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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Initial growth stage of nanoscaled TiN films : Formation of continuous amorphous layers and thickness-dependent crystal nucleation. / Li, T. Q.; Noda, S.; Komiyama, H.; Yamamoto, T.; Ikuhara, Y.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 21, No. 5, 09.2003, p. 1717-1723.

Research output: Contribution to journal › Article › peer-review

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Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation

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