Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation

T. Q. Li; S. Noda; H. Komiyama; T. Yamamoto; Y. Ikuhara

doi:10.1116/1.1598975

Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation

T. Q. Li, S. Noda, H. Komiyama, T. Yamamoto, Y. Ikuhara

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

The initial growth stage of titanium nitride (TiN) deposited by reactive magnetron sputtering onto (111)-oriented Si substrates was discussed. It was found that the growth of the crystal grains depended on the N₂ partial pressure. The analysis showed that for films formed at N₂ partial pressure equal to 0.47 Pa, an amorphous interlayer 1.5-1.8 nm thick formed between the TiN layer and Si substrate.

Original language	English
Pages (from-to)	1717-1723
Number of pages	7
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	5
DOIs	https://doi.org/10.1116/1.1598975
Publication status	Published - 2003 Sep
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1116/1.1598975

Fingerprint Dive into the research topics of 'Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation'. Together they form a unique fingerprint.

Cite this

Initial growth stage of nanoscaled TiN films : Formation of continuous amorphous layers and thickness-dependent crystal nucleation. / Li, T. Q.; Noda, S.; Komiyama, H.; Yamamoto, T.; Ikuhara, Y.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 21, No. 5, 09.2003, p. 1717-1723.

Research output: Contribution to journal › Article › peer-review

@article{578771501b8a402e82122479786aa8a8,

title = "Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation",

abstract = "The initial growth stage of titanium nitride (TiN) deposited by reactive magnetron sputtering onto (111)-oriented Si substrates was discussed. It was found that the growth of the crystal grains depended on the N2 partial pressure. The analysis showed that for films formed at N2 partial pressure equal to 0.47 Pa, an amorphous interlayer 1.5-1.8 nm thick formed between the TiN layer and Si substrate.",

author = "Li, {T. Q.} and S. Noda and H. Komiyama and T. Yamamoto and Y. Ikuhara",

year = "2003",

month = sep,

doi = "10.1116/1.1598975",

language = "English",

volume = "21",

pages = "1717--1723",

journal = "Journal of Vacuum Science and Technology A",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "5",

}

TY - JOUR

T1 - Initial growth stage of nanoscaled TiN films

T2 - Formation of continuous amorphous layers and thickness-dependent crystal nucleation

AU - Li, T. Q.

AU - Noda, S.

AU - Komiyama, H.

AU - Yamamoto, T.

AU - Ikuhara, Y.

PY - 2003/9

Y1 - 2003/9

N2 - The initial growth stage of titanium nitride (TiN) deposited by reactive magnetron sputtering onto (111)-oriented Si substrates was discussed. It was found that the growth of the crystal grains depended on the N2 partial pressure. The analysis showed that for films formed at N2 partial pressure equal to 0.47 Pa, an amorphous interlayer 1.5-1.8 nm thick formed between the TiN layer and Si substrate.

AB - The initial growth stage of titanium nitride (TiN) deposited by reactive magnetron sputtering onto (111)-oriented Si substrates was discussed. It was found that the growth of the crystal grains depended on the N2 partial pressure. The analysis showed that for films formed at N2 partial pressure equal to 0.47 Pa, an amorphous interlayer 1.5-1.8 nm thick formed between the TiN layer and Si substrate.

UR - http://www.scopus.com/inward/record.url?scp=0142027007&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0142027007&partnerID=8YFLogxK

U2 - 10.1116/1.1598975

DO - 10.1116/1.1598975

M3 - Article

AN - SCOPUS:0142027007

VL - 21

SP - 1717

EP - 1723

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 5

ER -

Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this