Abstract
The initial growth stage of titanium nitride (TiN) deposited by reactive magnetron sputtering onto (111)-oriented Si substrates was discussed. It was found that the growth of the crystal grains depended on the N2 partial pressure. The analysis showed that for films formed at N2 partial pressure equal to 0.47 Pa, an amorphous interlayer 1.5-1.8 nm thick formed between the TiN layer and Si substrate.
| Original language | English |
|---|---|
| Pages (from-to) | 1717-1723 |
| Number of pages | 7 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 21 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2003 Sep |
| Externally published | Yes |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)
Cite this
Initial growth stage of nanoscaled TiN films : Formation of continuous amorphous layers and thickness-dependent crystal nucleation. / Li, T. Q.; Noda, Suguru; Komiyama, H.; Yamamoto, T.; Ikuhara, Y.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 21, No. 5, 09.2003, p. 1717-1723.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Initial growth stage of nanoscaled TiN films
T2 - Formation of continuous amorphous layers and thickness-dependent crystal nucleation
AU - Li, T. Q.
AU - Noda, Suguru
AU - Komiyama, H.
AU - Yamamoto, T.
AU - Ikuhara, Y.
PY - 2003/9
Y1 - 2003/9
N2 - The initial growth stage of titanium nitride (TiN) deposited by reactive magnetron sputtering onto (111)-oriented Si substrates was discussed. It was found that the growth of the crystal grains depended on the N2 partial pressure. The analysis showed that for films formed at N2 partial pressure equal to 0.47 Pa, an amorphous interlayer 1.5-1.8 nm thick formed between the TiN layer and Si substrate.
AB - The initial growth stage of titanium nitride (TiN) deposited by reactive magnetron sputtering onto (111)-oriented Si substrates was discussed. It was found that the growth of the crystal grains depended on the N2 partial pressure. The analysis showed that for films formed at N2 partial pressure equal to 0.47 Pa, an amorphous interlayer 1.5-1.8 nm thick formed between the TiN layer and Si substrate.
UR - http://www.scopus.com/inward/record.url?scp=0142027007&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0142027007&partnerID=8YFLogxK
U2 - 10.1116/1.1598975
DO - 10.1116/1.1598975
M3 - Article
AN - SCOPUS:0142027007
VL - 21
SP - 1717
EP - 1723
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 5
ER -