Initial growth stage of nanoscaled TiN films

Formation of continuous amorphous layers and thickness-dependent crystal nucleation

T. Q. Li, Suguru Noda, H. Komiyama, T. Yamamoto, Y. Ikuhara

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

The initial growth stage of titanium nitride (TiN) deposited by reactive magnetron sputtering onto (111)-oriented Si substrates was discussed. It was found that the growth of the crystal grains depended on the N2 partial pressure. The analysis showed that for films formed at N2 partial pressure equal to 0.47 Pa, an amorphous interlayer 1.5-1.8 nm thick formed between the TiN layer and Si substrate.

Original languageEnglish
Pages (from-to)1717-1723
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume21
Issue number5
DOIs
Publication statusPublished - 2003 Sep
Externally publishedYes

Fingerprint

Titanium nitride
titanium nitrides
Partial pressure
partial pressure
Nucleation
nucleation
Crystals
Reactive sputtering
Substrates
Crystallization
Magnetron sputtering
crystals
interlayers
magnetron sputtering
titanium nitride

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Initial growth stage of nanoscaled TiN films : Formation of continuous amorphous layers and thickness-dependent crystal nucleation. / Li, T. Q.; Noda, Suguru; Komiyama, H.; Yamamoto, T.; Ikuhara, Y.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 21, No. 5, 09.2003, p. 1717-1723.

Research output: Contribution to journalArticle

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