Abstract
The initial growth stage of titanium nitride (TiN) deposited by reactive magnetron sputtering onto (111)-oriented Si substrates was discussed. It was found that the growth of the crystal grains depended on the N2 partial pressure. The analysis showed that for films formed at N2 partial pressure equal to 0.47 Pa, an amorphous interlayer 1.5-1.8 nm thick formed between the TiN layer and Si substrate.
| Original language | English |
|---|---|
| Pages (from-to) | 1717-1723 |
| Number of pages | 7 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 21 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2003 Sep 1 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
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Li, T. Q., Noda, S., Komiyama, H., Yamamoto, T., & Ikuhara, Y. (2003). Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 21(5), 1717-1723. https://doi.org/10.1116/1.1598975