Initial oxidation process by ozone on Si(1 0 0) investigated by scanning tunneling microscopy

Hiroshi Itoh, Ken Nakamura, Akira Kurokawa, Shingo Ichimura

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Ozone is a strong oxidant due to its release of atomic oxygen. The initial ozone oxidation process at room temperature and the roughness of the interface were investigated using scanning tunneling microscopy (STM). The most favorable adsorption site was the bridge site on the Si dimer at initial oxidation using ozone gas. Less than 10% of the oxygen atoms on the surface were located at the bridge site between the Si dimers. The rest of the oxygen atoms were inserted into the backbond below the Si dimer atom near the defects. This indicates that the oxygen atom is inserted into the backbond of the Si dimer through original and etched defects. The interface of SiO2/Si was characterized after the oxide film was removed by hydrofluoric acid. STM images were obtained from the etched surface. The roughness of the STM image was below 0.2 nm rms. This result indicates that the interface between the silicon and ozone oxides limits the roughness to two to three SiO2 layers at most after oxidation by ozone.

Original languageEnglish
Pages (from-to)114-120
Number of pages7
JournalSurface Science
Volume482-485
Issue numberPART 1
DOIs
Publication statusPublished - 2001 Jun 20
Externally publishedYes

Fingerprint

Ozone
Scanning tunneling microscopy
ozone
scanning tunneling microscopy
Dimers
Oxidation
oxidation
dimers
Oxygen
oxygen atoms
Atoms
roughness
Surface roughness
Hydrofluoric Acid
Defects
Hydrofluoric acid
hydrofluoric acid
defects
Silicon
silicon oxides

Keywords

  • Adsorption kinetics
  • Models of surface kinetics
  • Scanning tunneling microscopy
  • Semiconductor-insulator interfaces
  • Silicon
  • Silicon oxides

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Initial oxidation process by ozone on Si(1 0 0) investigated by scanning tunneling microscopy. / Itoh, Hiroshi; Nakamura, Ken; Kurokawa, Akira; Ichimura, Shingo.

In: Surface Science, Vol. 482-485, No. PART 1, 20.06.2001, p. 114-120.

Research output: Contribution to journalArticle

Itoh, Hiroshi ; Nakamura, Ken ; Kurokawa, Akira ; Ichimura, Shingo. / Initial oxidation process by ozone on Si(1 0 0) investigated by scanning tunneling microscopy. In: Surface Science. 2001 ; Vol. 482-485, No. PART 1. pp. 114-120.
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AB - Ozone is a strong oxidant due to its release of atomic oxygen. The initial ozone oxidation process at room temperature and the roughness of the interface were investigated using scanning tunneling microscopy (STM). The most favorable adsorption site was the bridge site on the Si dimer at initial oxidation using ozone gas. Less than 10% of the oxygen atoms on the surface were located at the bridge site between the Si dimers. The rest of the oxygen atoms were inserted into the backbond below the Si dimer atom near the defects. This indicates that the oxygen atom is inserted into the backbond of the Si dimer through original and etched defects. The interface of SiO2/Si was characterized after the oxide film was removed by hydrofluoric acid. STM images were obtained from the etched surface. The roughness of the STM image was below 0.2 nm rms. This result indicates that the interface between the silicon and ozone oxides limits the roughness to two to three SiO2 layers at most after oxidation by ozone.

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