TY - JOUR
T1 - Initial stage of Au adsorption onto a Si(111) surface studied by scanning tunneling microscopy
AU - Hasegawa, T.
AU - Takata, K.
AU - Hosaka, S.
AU - Hosoki, S.
N1 - Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 1991/3
Y1 - 1991/3
N2 - The initial stage of Au adsorption onto a Si (111) surface (< 0.2 ML) is studied by scanning tunneling microscopy (STM). Au is deposited at room temperature, and then the sample is annealed at 700°c. At the very early stage of Au adsorption, a Au-adsorbed 5 × structure is found not to break a 7 × 7 structure. By increasing the amount of adsorbed Au, the Si substrate itself shows a 5 × structure. Rows of the Au-adsorbed 5 × structure are observed to have grown from the lower side of steps.
AB - The initial stage of Au adsorption onto a Si (111) surface (< 0.2 ML) is studied by scanning tunneling microscopy (STM). Au is deposited at room temperature, and then the sample is annealed at 700°c. At the very early stage of Au adsorption, a Au-adsorbed 5 × structure is found not to break a 7 × 7 structure. By increasing the amount of adsorbed Au, the Si substrate itself shows a 5 × structure. Rows of the Au-adsorbed 5 × structure are observed to have grown from the lower side of steps.
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U2 - 10.1116/1.585549
DO - 10.1116/1.585549
M3 - Article
AN - SCOPUS:33744638216
VL - 9
SP - 758
EP - 760
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 2
ER -