Abstract
The initial stage of Au adsorption onto a Si (111) surface (< 0.2 ML) is studied by scanning tunneling microscopy (STM). Au is deposited at room temperature, and then the sample is annealed at 700°c. At the very early stage of Au adsorption, a Au-adsorbed 5 × structure is found not to break a 7 × 7 structure. By increasing the amount of adsorbed Au, the Si substrate itself shows a 5 × structure. Rows of the Au-adsorbed 5 × structure are observed to have grown from the lower side of steps.
| Original language | English |
|---|---|
| Pages (from-to) | 758-760 |
| Number of pages | 3 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 9 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1991 Mar |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Initial stage of Au adsorption onto a Si(111) surface studied by scanning tunneling microscopy. / Hasegawa, Tsuyoshi; Takata, K.; Hosaka, S.; Hosoki, S.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 9, No. 2, 03.1991, p. 758-760.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Initial stage of Au adsorption onto a Si(111) surface studied by scanning tunneling microscopy
AU - Hasegawa, Tsuyoshi
AU - Takata, K.
AU - Hosaka, S.
AU - Hosoki, S.
PY - 1991/3
Y1 - 1991/3
N2 - The initial stage of Au adsorption onto a Si (111) surface (< 0.2 ML) is studied by scanning tunneling microscopy (STM). Au is deposited at room temperature, and then the sample is annealed at 700°c. At the very early stage of Au adsorption, a Au-adsorbed 5 × structure is found not to break a 7 × 7 structure. By increasing the amount of adsorbed Au, the Si substrate itself shows a 5 × structure. Rows of the Au-adsorbed 5 × structure are observed to have grown from the lower side of steps.
AB - The initial stage of Au adsorption onto a Si (111) surface (< 0.2 ML) is studied by scanning tunneling microscopy (STM). Au is deposited at room temperature, and then the sample is annealed at 700°c. At the very early stage of Au adsorption, a Au-adsorbed 5 × structure is found not to break a 7 × 7 structure. By increasing the amount of adsorbed Au, the Si substrate itself shows a 5 × structure. Rows of the Au-adsorbed 5 × structure are observed to have grown from the lower side of steps.
UR - http://www.scopus.com/inward/record.url?scp=33744638216&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33744638216&partnerID=8YFLogxK
U2 - 10.1116/1.585549
DO - 10.1116/1.585549
M3 - Article
AN - SCOPUS:33744638216
VL - 9
SP - 758
EP - 760
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 2
ER -