Initial stage of oxygen adsorption onto a Si(111)-7 × 7 surface studied by scanning tunneling microscopy

Tsuyoshi Hasegawa, Makiko Kohno, Shigeyuki Hosoki

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The initial stage of oxygen adsorption onto a Si(111)-7 × 7 surface has been studied at room temperature by scanning tunneling microscopy. The surface was exposed to oxygen under a partial pressure of 1 × 10-9 Torr. Initial exposure led to bright and dark features at adatom sites. This dark feature, which was previously reported as a main channel for oxidation, only appeared in the faulted half of the dimer adatom stacking-fault (DAS) structure. The images suggest that the adsorption onto the un-faulted half starts after the faulted half are occupied with oxygen atoms. This clearly indicates that oxygen adsorption occurs at adatom sites with higher energy states.

Original languageEnglish
Pages (from-to)3702-3705
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume33
Issue number6 B
Publication statusPublished - 1994 Jun
Externally publishedYes

Fingerprint

Scanning tunneling microscopy
adatoms
Adatoms
scanning tunneling microscopy
Adsorption
adsorption
Oxygen
oxygen
crystal defects
partial pressure
oxygen atoms
Stacking faults
dimers
Dimers
Partial pressure
Electron energy levels
oxidation
room temperature
Atoms
Oxidation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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AU - Hosoki, Shigeyuki

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