Initial stages of oxygen adsorption onto a Si(111)-7×7 surface studied by STM

Tsuyoshi Hasegawa, Makiko Kohno, Sumio Hosaka, Shigeyuki Hosoki

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The initial stage of oxygen adsorption onto a Si(111)-7×7 surface has been studied by scanning tunneling microscopy. The substrate was exposed to oxygen under a partial pressure of 1× 10-9 Torr at room temperature during the observation. Dark features, which have been reported as a main channel for oxidation, appeared exclusively in the faulted halves of the DAS structure though bright features appeared in both halves. This difference can be explained by the adsorption site of oxygen. That is, the greater energy difference of the dangling-bonds of adatoms between both halves than that of the back-bonds causes the exclusive appearance of the dark feature, which has an oxygen atom on on-top site in addition to the other in the back-bond.

Original languageEnglish
JournalSurface Science
Volume312
Issue number1-2
DOIs
Publication statusPublished - 1994 Jun 1
Externally publishedYes

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Oxygen
Adsorption
adsorption
amsonic acid
oxygen
adatoms
Dangling bonds
partial pressure
Adatoms
scanning tunneling microscopy
oxygen atoms
Scanning tunneling microscopy
Partial pressure
oxidation
causes
room temperature
Atoms
Oxidation
Substrates
energy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Initial stages of oxygen adsorption onto a Si(111)-7×7 surface studied by STM. / Hasegawa, Tsuyoshi; Kohno, Makiko; Hosaka, Sumio; Hosoki, Shigeyuki.

In: Surface Science, Vol. 312, No. 1-2, 01.06.1994.

Research output: Contribution to journalArticle

Hasegawa, Tsuyoshi ; Kohno, Makiko ; Hosaka, Sumio ; Hosoki, Shigeyuki. / Initial stages of oxygen adsorption onto a Si(111)-7×7 surface studied by STM. In: Surface Science. 1994 ; Vol. 312, No. 1-2.
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