Initial stages of oxygen adsorption onto a Si(111)-7×7 surface studied by STM

Tsuyoshi Hasegawa; Makiko Kohno; Sumio Hosaka; Shigeyuki Hosoki

doi:10.1016/0039-6028(94)90796-X

Initial stages of oxygen adsorption onto a Si(111)-7×7 surface studied by STM

Tsuyoshi Hasegawa^*, Makiko Kohno, Sumio Hosaka, Shigeyuki Hosoki

^*Corresponding author for this work

Research output: Contribution to journal › Letter › peer-review

9 Citations (Scopus)

Abstract

The initial stage of oxygen adsorption onto a Si(111)-7×7 surface has been studied by scanning tunneling microscopy. The substrate was exposed to oxygen under a partial pressure of 1× 10^-9 Torr at room temperature during the observation. Dark features, which have been reported as a main channel for oxidation, appeared exclusively in the faulted halves of the DAS structure though bright features appeared in both halves. This difference can be explained by the adsorption site of oxygen. That is, the greater energy difference of the dangling-bonds of adatoms between both halves than that of the back-bonds causes the exclusive appearance of the dark feature, which has an oxygen atom on on-top site in addition to the other in the back-bond.

Original language	English
Pages (from-to)	L753-L756
Journal	Surface Science
Volume	312
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(94)90796-X
Publication status	Published - 1994 Jun 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(94)90796-X

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abstract = "The initial stage of oxygen adsorption onto a Si(111)-7×7 surface has been studied by scanning tunneling microscopy. The substrate was exposed to oxygen under a partial pressure of 1× 10-9 Torr at room temperature during the observation. Dark features, which have been reported as a main channel for oxidation, appeared exclusively in the faulted halves of the DAS structure though bright features appeared in both halves. This difference can be explained by the adsorption site of oxygen. That is, the greater energy difference of the dangling-bonds of adatoms between both halves than that of the back-bonds causes the exclusive appearance of the dark feature, which has an oxygen atom on on-top site in addition to the other in the back-bond.",

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T1 - Initial stages of oxygen adsorption onto a Si(111)-7×7 surface studied by STM

AU - Hasegawa, Tsuyoshi

AU - Kohno, Makiko

AU - Hosaka, Sumio

AU - Hosoki, Shigeyuki

PY - 1994/6/1

Y1 - 1994/6/1

N2 - The initial stage of oxygen adsorption onto a Si(111)-7×7 surface has been studied by scanning tunneling microscopy. The substrate was exposed to oxygen under a partial pressure of 1× 10-9 Torr at room temperature during the observation. Dark features, which have been reported as a main channel for oxidation, appeared exclusively in the faulted halves of the DAS structure though bright features appeared in both halves. This difference can be explained by the adsorption site of oxygen. That is, the greater energy difference of the dangling-bonds of adatoms between both halves than that of the back-bonds causes the exclusive appearance of the dark feature, which has an oxygen atom on on-top site in addition to the other in the back-bond.

AB - The initial stage of oxygen adsorption onto a Si(111)-7×7 surface has been studied by scanning tunneling microscopy. The substrate was exposed to oxygen under a partial pressure of 1× 10-9 Torr at room temperature during the observation. Dark features, which have been reported as a main channel for oxidation, appeared exclusively in the faulted halves of the DAS structure though bright features appeared in both halves. This difference can be explained by the adsorption site of oxygen. That is, the greater energy difference of the dangling-bonds of adatoms between both halves than that of the back-bonds causes the exclusive appearance of the dark feature, which has an oxygen atom on on-top site in addition to the other in the back-bond.

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Initial stages of oxygen adsorption onto a Si(111)-7×7 surface studied by STM

Abstract

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