TY - JOUR
T1 - Ink-jet printing of a single-walled carbon nanotube thin film transistor
AU - Okimoto, Haruya
AU - Takenobu, Taishi
AU - Yanagi, Kazuhiro
AU - Miyata, Yasumitsu
AU - Kataura, Hiromichi
AU - Asano, Takeshi
AU - Iwasa, Yoshihiro
PY - 2009/6
Y1 - 2009/6
N2 - Single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) were fabricated using ink-jet printing. We printed both thick source- drain electrodes and thin active semiconducting films using N, N-dimethylformamide (DMF)-based SWCNT dispersion. Despite the presence of metallic SWCNTs, the device exhibited field-effect behavior, with an effective mobility of 2.99 cm2 V-1 s-1 and an on/off current ratio of up to 75. The method used in this study is promising for the fabrication of large-scale high-performance SWCNT-TFTs.
AB - Single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) were fabricated using ink-jet printing. We printed both thick source- drain electrodes and thin active semiconducting films using N, N-dimethylformamide (DMF)-based SWCNT dispersion. Despite the presence of metallic SWCNTs, the device exhibited field-effect behavior, with an effective mobility of 2.99 cm2 V-1 s-1 and an on/off current ratio of up to 75. The method used in this study is promising for the fabrication of large-scale high-performance SWCNT-TFTs.
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U2 - 10.1143/JJAP.48.06FF03
DO - 10.1143/JJAP.48.06FF03
M3 - Article
AN - SCOPUS:70249142527
SN - 0021-4922
VL - 48
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 6 PART 2
ER -