InP/InGaAs Double-Heterojunction Bipolar Transistors Grown on (100) Si by Metalorganic Chemical Vapor Deposition

Toshiki Makimoto, Kenji Kurishima, Takashi Kobayashi, Tadao Ishibashi

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We report, for the first time, the successful fabrication of InP/InGaAs double-heterojunction bipolar transistors (DHBT’s), grown by metalorganic chemical vapor deposition (MOCVD) on Si substrates. The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates. The dislocations are found to increase the recombination current very little in the neutral base region, but increase the generation-recombination current at the emitter-base interface.

Original languageEnglish
Pages (from-to)369-371
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number7
DOIs
Publication statusPublished - 1991 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'InP/InGaAs Double-Heterojunction Bipolar Transistors Grown on (100) Si by Metalorganic Chemical Vapor Deposition'. Together they form a unique fingerprint.

  • Cite this