InP/InGaAs double-heterojunction bipolar transistors grown on (100) Si by metalorganic chemical vapor deposition

Toshiki Makimoto, Kenji Kurishima, Takashi Kobayashi, Tadao Ishibashi

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The authors report the successful fabrication of InP/InGaAs double-heterojunction bipolar transistors (DHBTs) grown by metalorganic chemical vapor deposition (MOCVD) on Si substrates. The Si substrates used were p-type (boron doped) FZ grown wafers with a resistivity of 5000 Ω × cm, oriented 2° off the (100) plane toward the [110] direction. Epitaxial layers for DHBTs were grown on the Si substrate with a thin GaAs buffer layer. A two-step growth process was applied for the InP layers on GaAs-on-Si wafers. The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates. The dislocations are found to increase the recombination current very little in the neutral base region, but increase in generation-recombination current at the emitter-base interface.

Original languageEnglish
Pages (from-to)369-371
Number of pages3
JournalElectron device letters
Volume12
Issue number7
Publication statusPublished - 1991 Jul
Externally publishedYes

Fingerprint

Metallorganic chemical vapor deposition
Heterojunction bipolar transistors
Substrates
Transistors
Boron
Epitaxial layers
Buffer layers
Fabrication
gallium arsenide

ASJC Scopus subject areas

  • Engineering(all)

Cite this

InP/InGaAs double-heterojunction bipolar transistors grown on (100) Si by metalorganic chemical vapor deposition. / Makimoto, Toshiki; Kurishima, Kenji; Kobayashi, Takashi; Ishibashi, Tadao.

In: Electron device letters, Vol. 12, No. 7, 07.1991, p. 369-371.

Research output: Contribution to journalArticle

Makimoto, Toshiki ; Kurishima, Kenji ; Kobayashi, Takashi ; Ishibashi, Tadao. / InP/InGaAs double-heterojunction bipolar transistors grown on (100) Si by metalorganic chemical vapor deposition. In: Electron device letters. 1991 ; Vol. 12, No. 7. pp. 369-371.
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