We report, for the first time, the successful fabrication of InP/InGaAs double-heterojunction bipolar transistors (DHBT’s), grown by metalorganic chemical vapor deposition (MOCVD) on Si substrates. The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates. The dislocations are found to increase the recombination current very little in the neutral base region, but increase the generation-recombination current at the emitter-base interface.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering