Abstract
The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 3815-3817 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 30 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1991 |
| Externally published | Yes |
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Keywords
- Current gain
- Dislocation
- HBT
- Heteroepitaxy
- InP/Si
- MOCVD
- X-ray FWHM
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Inp/ingaas double heterojunction bipolar transistors grown on si. / Makimoto, Toshiki; Kurishima, Kenji; Kobayashi, Takashi; Ishibashi, Tadao.
In: Japanese Journal of Applied Physics, Vol. 30, No. 12, 1991, p. 3815-3817.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Inp/ingaas double heterojunction bipolar transistors grown on si
AU - Makimoto, Toshiki
AU - Kurishima, Kenji
AU - Kobayashi, Takashi
AU - Ishibashi, Tadao
PY - 1991
Y1 - 1991
N2 - The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.
AB - The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.
KW - Current gain
KW - Dislocation
KW - HBT
KW - Heteroepitaxy
KW - InP/Si
KW - MOCVD
KW - X-ray FWHM
UR - http://www.scopus.com/inward/record.url?scp=0142073019&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0142073019&partnerID=8YFLogxK
U2 - 10.1143/JJAP.30.3815
DO - 10.1143/JJAP.30.3815
M3 - Article
AN - SCOPUS:0142073019
VL - 30
SP - 3815
EP - 3817
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12
ER -