Abstract
The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.
Original language | English |
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Pages (from-to) | 3815-3817 |
Number of pages | 3 |
Journal | Japanese journal of applied physics |
Volume | 30 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1991 Dec |
Externally published | Yes |
Keywords
- Current gain
- Dislocation
- HBT
- Heteroepitaxy
- InP/Si
- MOCVD
- X-ray FWHM
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)