Inp/ingaas double heterojunction bipolar transistors grown on si

Toshiki Makimoto, Kenji Kurishima, Takashi Kobayashi, Tadao Ishibashi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.

Original languageEnglish
Pages (from-to)3815-3817
Number of pages3
JournalJapanese Journal of Applied Physics
Volume30
Issue number12
DOIs
Publication statusPublished - 1991
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
Buffer layers
bipolar transistors
heterojunctions
Transistors
transistors
buffers
Metallorganic chemical vapor deposition
Substrates
metalorganic chemical vapor deposition
high current
Doping (additives)

Keywords

  • Current gain
  • Dislocation
  • HBT
  • Heteroepitaxy
  • InP/Si
  • MOCVD
  • X-ray FWHM

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Inp/ingaas double heterojunction bipolar transistors grown on si. / Makimoto, Toshiki; Kurishima, Kenji; Kobayashi, Takashi; Ishibashi, Tadao.

In: Japanese Journal of Applied Physics, Vol. 30, No. 12, 1991, p. 3815-3817.

Research output: Contribution to journalArticle

Makimoto, Toshiki ; Kurishima, Kenji ; Kobayashi, Takashi ; Ishibashi, Tadao. / Inp/ingaas double heterojunction bipolar transistors grown on si. In: Japanese Journal of Applied Physics. 1991 ; Vol. 30, No. 12. pp. 3815-3817.
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