Abstract
The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 3815-3817 |
| Number of pages | 3 |
| Journal | Japanese journal of applied physics |
| Volume | 30 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1991 Dec |
Keywords
- Current gain
- Dislocation
- HBT
- Heteroepitaxy
- InP/Si
- MOCVD
- X-ray FWHM
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Makimoto, T., Kurishima, K., Kobayashi, T., & Ishibashi, T. (1991). Inp/ingaas double heterojunction bipolar transistors grown on si. Japanese journal of applied physics, 30(12), 3815-3817. https://doi.org/10.1143/JJAP.30.3815