Inp/ingaas double heterojunction bipolar transistors grown on si

Toshiki Makimoto; Kenji Kurishima; Takashi Kobayashi; Tadao Ishibashi

doi:10.1143/JJAP.30.3815

Inp/ingaas double heterojunction bipolar transistors grown on si

Toshiki Makimoto, Kenji Kurishima, Takashi Kobayashi, Tadao Ishibashi

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.

Original language	English
Pages (from-to)	3815-3817
Number of pages	3
Journal	Japanese journal of applied physics
Volume	30
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.30.3815
Publication status	Published - 1991 Dec
Externally published	Yes

Keywords

Current gain
Dislocation
HBT
Heteroepitaxy
InP/Si
MOCVD
X-ray FWHM

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.",

keywords = "Current gain, Dislocation, HBT, Heteroepitaxy, InP/Si, MOCVD, X-ray FWHM",

author = "Toshiki Makimoto and Kenji Kurishima and Takashi Kobayashi and Tadao Ishibashi",

year = "1991",

month = dec,

doi = "10.1143/JJAP.30.3815",

language = "English",

volume = "30",

pages = "3815--3817",

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T1 - Inp/ingaas double heterojunction bipolar transistors grown on si

AU - Makimoto, Toshiki

AU - Kurishima, Kenji

AU - Kobayashi, Takashi

AU - Ishibashi, Tadao

PY - 1991/12

Y1 - 1991/12

N2 - The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.

AB - The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.

KW - Current gain

KW - Dislocation

KW - HBT

KW - Heteroepitaxy

KW - InP/Si

KW - MOCVD

KW - X-ray FWHM

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DO - 10.1143/JJAP.30.3815

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12

ER -

Inp/ingaas double heterojunction bipolar transistors grown on si

Abstract

Keywords

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