Inp/ingaas double heterojunction bipolar transistors grown on si

Toshiki Makimoto; Kenji Kurishima; Takashi Kobayashi; Tadao Ishibashi

doi:10.1143/JJAP.30.3815

Inp/ingaas double heterojunction bipolar transistors grown on si

Toshiki Makimoto, Kenji Kurishima, Takashi Kobayashi, Tadao Ishibashi

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.

Original language	English
Pages (from-to)	3815-3817
Number of pages	3
Journal	Japanese journal of applied physics
Volume	30
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.30.3815
Publication status	Published - 1991 Dec
Externally published	Yes

Keywords

Current gain
Dislocation
HBT
Heteroepitaxy
InP/Si
MOCVD
X-ray FWHM

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.30.3815

Cite this

@article{88e3f6b7e4ab4d278687cb0309a12f91,

title = "Inp/ingaas double heterojunction bipolar transistors grown on si",

abstract = "The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.",

keywords = "Current gain, Dislocation, HBT, Heteroepitaxy, InP/Si, MOCVD, X-ray FWHM",

author = "Toshiki Makimoto and Kenji Kurishima and Takashi Kobayashi and Tadao Ishibashi",

year = "1991",

month = dec,

doi = "10.1143/JJAP.30.3815",

language = "English",

volume = "30",

pages = "3815--3817",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "12",

}

TY - JOUR

T1 - Inp/ingaas double heterojunction bipolar transistors grown on si

AU - Makimoto, Toshiki

AU - Kurishima, Kenji

AU - Kobayashi, Takashi

AU - Ishibashi, Tadao

PY - 1991/12

Y1 - 1991/12

N2 - The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.

AB - The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.

KW - Current gain

KW - Dislocation

KW - HBT

KW - Heteroepitaxy

KW - InP/Si

KW - MOCVD

KW - X-ray FWHM

UR - http://www.scopus.com/inward/record.url?scp=0142073019&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0142073019&partnerID=8YFLogxK

U2 - 10.1143/JJAP.30.3815

DO - 10.1143/JJAP.30.3815

M3 - Article

AN - SCOPUS:0142073019

VL - 30

SP - 3815

EP - 3817

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12

ER -

Inp/ingaas double heterojunction bipolar transistors grown on si

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this