InP/InGaAs double heterojunction bipolar transistors grown on Si substrates

Toshiki Makimoto, Kenji Kurishima, Takashi Kobayashi, Tadao Ishibashi

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.

Original languageEnglish
Pages74-76
Number of pages3
Publication statusPublished - 1991 Jan 1
Externally publishedYes
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • Engineering(all)

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    Makimoto, T., Kurishima, K., Kobayashi, T., & Ishibashi, T. (1991). InP/InGaAs double heterojunction bipolar transistors grown on Si substrates. 74-76. Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, .