InP/InGaAs double heterojunction bipolar transistors grown on Si substrates

Toshiki Makimoto; Kenji Kurishima; Takashi Kobayashi; Tadao Ishibashi

doi:10.7567/ssdm.1991.c-1-3

InP/InGaAs double heterojunction bipolar transistors grown on Si substrates

Toshiki Makimoto^*, Kenji Kurishima, Takashi Kobayashi, Tadao Ishibashi

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.

Original language	English
Pages	74-76
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1991.c-1-3
Publication status	Published - 1991
Externally published	Yes
Event	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: 1991 Aug 27 → 1991 Aug 29

Other

Other	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	91/8/27 → 91/8/29

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.7567/ssdm.1991.c-1-3

Cite this

@conference{96645b0a899e4a2d8eadc06348979e2c,

title = "InP/InGaAs double heterojunction bipolar transistors grown on Si substrates",

abstract = "We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.",

author = "Toshiki Makimoto and Kenji Kurishima and Takashi Kobayashi and Tadao Ishibashi",

year = "1991",

doi = "10.7567/ssdm.1991.c-1-3",

language = "English",

pages = "74--76",

note = "23rd International Conference on Solid State Devices and Materials - SSDM '91 ; Conference date: 27-08-1991 Through 29-08-1991",

}

TY - CONF

T1 - InP/InGaAs double heterojunction bipolar transistors grown on Si substrates

AU - Makimoto, Toshiki

AU - Kurishima, Kenji

AU - Kobayashi, Takashi

AU - Ishibashi, Tadao

PY - 1991

Y1 - 1991

N2 - We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.

AB - We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.

UR - http://www.scopus.com/inward/record.url?scp=0025842226&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025842226&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1991.c-1-3

DO - 10.7567/ssdm.1991.c-1-3

M3 - Paper

AN - SCOPUS:0025842226

SP - 74

EP - 76

T2 - 23rd International Conference on Solid State Devices and Materials - SSDM '91

Y2 - 27 August 1991 through 29 August 1991

ER -

InP/InGaAs double heterojunction bipolar transistors grown on Si substrates

Abstract

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this