InP/InGaAs double heterojunction bipolar transistors grown on Si substrates

Toshiki Makimoto, Kenji Kurishima, Takashi Kobayashi, Tadao Ishibashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
Place of PublicationTokyo, Japan
PublisherPubl by Business Cent for Acad Soc Japan
Pages74-76
Number of pages3
Publication statusPublished - 1991
Externally publishedYes
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

Fingerprint

Heterojunction bipolar transistors
Transistors
Metallorganic chemical vapor deposition
Substrates
Buffer layers
Fabrication

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Makimoto, T., Kurishima, K., Kobayashi, T., & Ishibashi, T. (1991). InP/InGaAs double heterojunction bipolar transistors grown on Si substrates. In Conference on Solid State Devices and Materials (pp. 74-76). Tokyo, Japan: Publ by Business Cent for Acad Soc Japan.

InP/InGaAs double heterojunction bipolar transistors grown on Si substrates. / Makimoto, Toshiki; Kurishima, Kenji; Kobayashi, Takashi; Ishibashi, Tadao.

Conference on Solid State Devices and Materials. Tokyo, Japan : Publ by Business Cent for Acad Soc Japan, 1991. p. 74-76.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Makimoto, T, Kurishima, K, Kobayashi, T & Ishibashi, T 1991, InP/InGaAs double heterojunction bipolar transistors grown on Si substrates. in Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, Tokyo, Japan, pp. 74-76, 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, 91/8/27.
Makimoto T, Kurishima K, Kobayashi T, Ishibashi T. InP/InGaAs double heterojunction bipolar transistors grown on Si substrates. In Conference on Solid State Devices and Materials. Tokyo, Japan: Publ by Business Cent for Acad Soc Japan. 1991. p. 74-76
Makimoto, Toshiki ; Kurishima, Kenji ; Kobayashi, Takashi ; Ishibashi, Tadao. / InP/InGaAs double heterojunction bipolar transistors grown on Si substrates. Conference on Solid State Devices and Materials. Tokyo, Japan : Publ by Business Cent for Acad Soc Japan, 1991. pp. 74-76
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