Abstract
We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.
| Original language | English |
|---|---|
| Pages | 74-76 |
| Number of pages | 3 |
| Publication status | Published - 1991 Jan 1 |
| Externally published | Yes |
| Event | 23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: 1991 Aug 27 → 1991 Aug 29 |
Other
| Other | 23rd International Conference on Solid State Devices and Materials - SSDM '91 |
|---|---|
| City | Yokohama, Jpn |
| Period | 91/8/27 → 91/8/29 |
ASJC Scopus subject areas
- Engineering(all)
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Cite this
Makimoto, T., Kurishima, K., Kobayashi, T., & Ishibashi, T. (1991). InP/InGaAs double heterojunction bipolar transistors grown on Si substrates. 74-76. Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, .