Inp/ingaas heterostructure bipolar transistors grown at low temperature by metalorganic chemical vapor deposition

Kenji Kurishima, Toshiki Makimoto, Takashi Kobayashi, Tadao Ishibashi

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

We describe the performance of InP/InGaAs heterostructure bipolar transistors (HBTs) grown at low temperature by metalorganic chemical vapor deposition (MOCVD). HBTs with a base thickness of 70 nm and doping level of 1 x 1019 cm-3 show excellent current gain characteristics (current gains hFE>300, ideality factors nB< 1.25) at growth temperatures ranging from 500 to 575°C. In addition, Zn out-diffusion from the base layers into the undoped spacer layers is well suppressed to as low as 5 x 1017 cm-3.

Original languageEnglish
Pages (from-to)L258-L261
JournalJapanese journal of applied physics
Volume30
Issue number2B
DOIs
Publication statusPublished - 1991 Feb
Externally publishedYes

Keywords

  • HBT
  • InGaAs
  • InP
  • MOCVD
  • Zn diffusion

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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