InP/InGaAs heterostructure bipolar transistors grown at low temperature by metalorganic chemical vapor deposition

Kenji Kurishima, Toshiki Makimoto, Takashi Kobayashi, Tadao Ishibashi

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We describe the performance of InP/InGaAs heterostructure bipolar transistors (HBTs) grown at low temperature by metalorganic chemical vapor deposition (MOCVD). HBTs with a base thickness of 70 nm and doping level of 1 × 1019 cm-3 show excellent current gain characteristics (current gains hFE>300, ideality factors nB<1.25) at growth temperatures ranging from 500 to 575°C. In addition, Zn out-diffusion from the base layers into the undoped spacer layers is well suppressed to as low as 5 × 1017 cm-3.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume30
Issue number2 B
Publication statusPublished - 1991
Externally publishedYes

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Bipolar transistors
Metallorganic chemical vapor deposition
bipolar transistors
metalorganic chemical vapor deposition
Heterojunctions
Growth temperature
spacers
Doping (additives)
Temperature
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

InP/InGaAs heterostructure bipolar transistors grown at low temperature by metalorganic chemical vapor deposition. / Kurishima, Kenji; Makimoto, Toshiki; Kobayashi, Takashi; Ishibashi, Tadao.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 30, No. 2 B, 1991.

Research output: Contribution to journalArticle

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AU - Ishibashi, Tadao

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