Insulator engineering in GaN-based MIS HFETs

Narihiko Maeda, Masanobu Hiroki, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyama, Takuma Yagi, Toshiki Makimoto, Takatomo Enoki, Takashi Kobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs), i.e., GaN-based metal-insulator-semiconductor (MIS) HFETs, have been fabricated that exhibited excellent DC and RF characteristics together with the reduced gate leakage current (Ig). The Al2O3/ Si 3N4 bilayer gate insulator was used to simultaneously utilize (i) the high-quality interface between Si3N4 and AlGaN, and (ii) the high resistivity and high dielectric constant of Al 2O3. The Ig was less than 10-4 A/mm even at a gate voltage of +3 V. In a device with a gate length of 0.1 μm, the drain current was 1.30 A/mm, and the cut-off frequency (fT) and maximum oscillation frequency (fmax) were 70 and 90 GHz, respectively. Moreover, the deposition effect of insulators on the electrical properties in AlGaN/GaN heterostructures has been examined and theoretically analyzed for Si- and Al-based insulators (Si3N4, SiO 2, AlN, and Al2O3), because insulators are commonly used for surface passivation as well as the gate insulator, and hence, clarifying the insulator deposition effect is a fundamental issue in GaN-based HFETs. The increase in the two-dimensional electron gas (2DEG) was observed for all the insulators, and the effect was found to vary among insulators. One result is that Al2O3 was most effective to increase N s. The results were explained in terms of the change in the potential profile. The band engineering including insulators is proposed to be indispensable for interpreting and designing the device performance, because, through the potential profile change, the essential device parameters are altered such as the source resistance, the channel resistance under the insulated-gate, and its threshold voltage.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6473
DOIs
Publication statusPublished - 2007
Externally publishedYes
EventGallium Nitride Materials and Devices II - San Jose, CA
Duration: 2007 Jan 222007 Jan 25

Other

OtherGallium Nitride Materials and Devices II
CitySan Jose, CA
Period07/1/2207/1/25

Fingerprint

MIS (semiconductors)
High electron mobility transistors
Two dimensional electron gas
field effect transistors
insulators
engineering
Semiconductor materials
Metals
Gates (transistor)
Drain current
Cutoff frequency
Threshold voltage
Passivation
Leakage currents
Heterojunctions
Electric properties
Permittivity
Electric potential
profiles
threshold voltage

Keywords

  • AlO /SiN
  • AlGaN/GaN HFET
  • GaN-based HFET
  • Insulated-gate
  • Insulator engineering
  • MIS HFET
  • Surface passivation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Maeda, N., Hiroki, M., Watanabe, N., Oda, Y., Yokoyama, H., Yagi, T., ... Kobayashi, T. (2007). Insulator engineering in GaN-based MIS HFETs. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6473). [647316] https://doi.org/10.1117/12.703659

Insulator engineering in GaN-based MIS HFETs. / Maeda, Narihiko; Hiroki, Masanobu; Watanabe, Noriyuki; Oda, Yasuhiro; Yokoyama, Haruki; Yagi, Takuma; Makimoto, Toshiki; Enoki, Takatomo; Kobayashi, Takashi.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6473 2007. 647316.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Maeda, N, Hiroki, M, Watanabe, N, Oda, Y, Yokoyama, H, Yagi, T, Makimoto, T, Enoki, T & Kobayashi, T 2007, Insulator engineering in GaN-based MIS HFETs. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 6473, 647316, Gallium Nitride Materials and Devices II, San Jose, CA, 07/1/22. https://doi.org/10.1117/12.703659
Maeda N, Hiroki M, Watanabe N, Oda Y, Yokoyama H, Yagi T et al. Insulator engineering in GaN-based MIS HFETs. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6473. 2007. 647316 https://doi.org/10.1117/12.703659
Maeda, Narihiko ; Hiroki, Masanobu ; Watanabe, Noriyuki ; Oda, Yasuhiro ; Yokoyama, Haruki ; Yagi, Takuma ; Makimoto, Toshiki ; Enoki, Takatomo ; Kobayashi, Takashi. / Insulator engineering in GaN-based MIS HFETs. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6473 2007.
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abstract = "Insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs), i.e., GaN-based metal-insulator-semiconductor (MIS) HFETs, have been fabricated that exhibited excellent DC and RF characteristics together with the reduced gate leakage current (Ig). The Al2O3/ Si 3N4 bilayer gate insulator was used to simultaneously utilize (i) the high-quality interface between Si3N4 and AlGaN, and (ii) the high resistivity and high dielectric constant of Al 2O3. The Ig was less than 10-4 A/mm even at a gate voltage of +3 V. In a device with a gate length of 0.1 μm, the drain current was 1.30 A/mm, and the cut-off frequency (fT) and maximum oscillation frequency (fmax) were 70 and 90 GHz, respectively. Moreover, the deposition effect of insulators on the electrical properties in AlGaN/GaN heterostructures has been examined and theoretically analyzed for Si- and Al-based insulators (Si3N4, SiO 2, AlN, and Al2O3), because insulators are commonly used for surface passivation as well as the gate insulator, and hence, clarifying the insulator deposition effect is a fundamental issue in GaN-based HFETs. The increase in the two-dimensional electron gas (2DEG) was observed for all the insulators, and the effect was found to vary among insulators. One result is that Al2O3 was most effective to increase N s. The results were explained in terms of the change in the potential profile. The band engineering including insulators is proposed to be indispensable for interpreting and designing the device performance, because, through the potential profile change, the essential device parameters are altered such as the source resistance, the channel resistance under the insulated-gate, and its threshold voltage.",
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AU - Yokoyama, Haruki

AU - Yagi, Takuma

AU - Makimoto, Toshiki

AU - Enoki, Takatomo

AU - Kobayashi, Takashi

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N2 - Insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs), i.e., GaN-based metal-insulator-semiconductor (MIS) HFETs, have been fabricated that exhibited excellent DC and RF characteristics together with the reduced gate leakage current (Ig). The Al2O3/ Si 3N4 bilayer gate insulator was used to simultaneously utilize (i) the high-quality interface between Si3N4 and AlGaN, and (ii) the high resistivity and high dielectric constant of Al 2O3. The Ig was less than 10-4 A/mm even at a gate voltage of +3 V. In a device with a gate length of 0.1 μm, the drain current was 1.30 A/mm, and the cut-off frequency (fT) and maximum oscillation frequency (fmax) were 70 and 90 GHz, respectively. Moreover, the deposition effect of insulators on the electrical properties in AlGaN/GaN heterostructures has been examined and theoretically analyzed for Si- and Al-based insulators (Si3N4, SiO 2, AlN, and Al2O3), because insulators are commonly used for surface passivation as well as the gate insulator, and hence, clarifying the insulator deposition effect is a fundamental issue in GaN-based HFETs. The increase in the two-dimensional electron gas (2DEG) was observed for all the insulators, and the effect was found to vary among insulators. One result is that Al2O3 was most effective to increase N s. The results were explained in terms of the change in the potential profile. The band engineering including insulators is proposed to be indispensable for interpreting and designing the device performance, because, through the potential profile change, the essential device parameters are altered such as the source resistance, the channel resistance under the insulated-gate, and its threshold voltage.

AB - Insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs), i.e., GaN-based metal-insulator-semiconductor (MIS) HFETs, have been fabricated that exhibited excellent DC and RF characteristics together with the reduced gate leakage current (Ig). The Al2O3/ Si 3N4 bilayer gate insulator was used to simultaneously utilize (i) the high-quality interface between Si3N4 and AlGaN, and (ii) the high resistivity and high dielectric constant of Al 2O3. The Ig was less than 10-4 A/mm even at a gate voltage of +3 V. In a device with a gate length of 0.1 μm, the drain current was 1.30 A/mm, and the cut-off frequency (fT) and maximum oscillation frequency (fmax) were 70 and 90 GHz, respectively. Moreover, the deposition effect of insulators on the electrical properties in AlGaN/GaN heterostructures has been examined and theoretically analyzed for Si- and Al-based insulators (Si3N4, SiO 2, AlN, and Al2O3), because insulators are commonly used for surface passivation as well as the gate insulator, and hence, clarifying the insulator deposition effect is a fundamental issue in GaN-based HFETs. The increase in the two-dimensional electron gas (2DEG) was observed for all the insulators, and the effect was found to vary among insulators. One result is that Al2O3 was most effective to increase N s. The results were explained in terms of the change in the potential profile. The band engineering including insulators is proposed to be indispensable for interpreting and designing the device performance, because, through the potential profile change, the essential device parameters are altered such as the source resistance, the channel resistance under the insulated-gate, and its threshold voltage.

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