Integrated DFB Laser Diode and High-efficiency Mach-Zehnder Modulator using Membrane III-V Semiconductors on Si Photonics Platform

T. Hiraki, T. Aihara, T. Fujii, K. Takeda, T. Kakitsuka, T. Tsuchizawa, S. Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have demonstrated heterogeneous integration of a distributed feedback laser diode (LD) and high-efficiency InGaAsP Mach-Zehnder modulator (MZM) on Si waveguide circuits. Epitaxial regrowth on directly bonded III-V layer is a key to integrate III-V active materials with different bandgaps on Si. The integrated device shows a LD threshold current of 4.5 mA with a 500-μm active length, VπL of 0.4 Vcm with a 500-μm long phase shifter, and fiber coupled output power of 2.9 mW with an LD current of 70 mA. The device also shows an eye opening at 28 Gbit/s with 4.2 Vpp.

Original languageEnglish
Title of host publication2019 IEEE International Electron Devices Meeting, IEDM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728140315
DOIs
Publication statusPublished - 2019 Dec
Externally publishedYes
Event65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duration: 2019 Dec 72019 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2019-December
ISSN (Print)0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
CountryUnited States
CitySan Francisco
Period19/12/719/12/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Hiraki, T., Aihara, T., Fujii, T., Takeda, K., Kakitsuka, T., Tsuchizawa, T., & Matsuo, S. (2019). Integrated DFB Laser Diode and High-efficiency Mach-Zehnder Modulator using Membrane III-V Semiconductors on Si Photonics Platform. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 [8993518] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993518